Browsing by Author "Chiou, SW"

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Control the transverse mode of vertical cavity surface emitting lasers by anti-reflection coating
(2001)
Chiou, SW
;
Lee, CP
;
Yang, HP
;
Sung, CP
;
電子工程學系及電子研究所
We have successfully developed a selective surface coating technique to control the modal behavior of the ion-implanted vertical cavity surface emitting laser. Using selective deposition of germanium coating by lift-off process, we could spatially control the threshold gain condition of the VCSEL to support the single transverse mode. The threshold current is 7 mA and single transverse mode operation is maintained up to 1 mW. The method is simple and nondestructive compared to other techniques.
Mode control of vertical-cavity surface-emitting lasers by germanium coating
(2001-02-01)
Chiou, SW
;
Lin, G
;
Lee, CP
;
Yang, HP
;
Sung, CP
We have successfully developed a selective surface coating technique to control the modal behavior of the ion-implanted vertical-cavity surface-emitting laser (VCSEL). With selective deposition of a germanium coating by the lift-off process, we could spatially control the threshold gain condition of the VCSEL to support the single transverse mode. The threshold current is 7 mA and single transverse mode operation is maintained up to I mW. The method is simple and nondestructive compared with other techniques.
Optimization of OMVPE-grown GaInP/GaAs quantum well interfaces
(1999-10-01)
Chiou, SW
;
Lee, CP
;
Hong, JM
;
Chen, CW
;
Tsou, Y
A new and improved method of growing Al-free GaInP/GaAs quantum wells (QWs) is presented. We found that both interfaces are important for obtaining a high-quality quantum well. With an added H-2 purge and PH3 preflow procedure, we have significantly improved the GaInP on GaAs interface by eliminating the unwanted dark line region at the interface. At the GaAs on GaInP interface, we added a thin GaAsP layer. This layer effectively prevents the In memory effect at the interface. As a result of this new growth procedure, a linewidth of 6.7 meV (at 20 It) for the quantum well emission was achieved. (C) 1999 Elsevier Science B.V. All rights reserved.
Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes
(2000-02-15)
Chiou, SW
;
Lee, CP
;
Huang, CK
;
Chen, CW
;
電子工程學系及電子研究所
A structure for high brightness light-emitting diodes (LEDs) is demonstrated. A distributed Bragg reflector (DBR) is used to enhance the quantum efficiency of the LEDs. This unique DBR uses a composite structure that consists of two DBRs to provide both high reflectivity and wide angle reflection. For 590 nm (amber range) AlGaInP LEDs, the quantum efficiency is increased to 5.05% by using this composite DBR structure. This result is much better than those obtained from conventional DBRs, and is comparable to that of wafer bonded AlGaInP LEDs. (C) 2000 American Institute of Physics. [S0021-8979(00)01704-7].