<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

Browsing by Author "Chiou, Shan-Haw"

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item type:Item,
    An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor
    (2014-09-01)
    Hsu, Hsiao-Hsuan
    ;
    Chang, Chun-Yen
    ;
    Cheng, Chun-Hu
    ;
    Chiou, Shan-Haw
    ;
    Huang, Chiung-Hui
    This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO: Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm(2)/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO: Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.
  • Thumbnail Image
    Item type:Item,
    High Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnO
    (2014-01-01)
    Hsu, Hsiao-Hsuan
    ;
    Chang, Chun-Yen
    ;
    Cheng, Chun-Hu
    ;
    Chiou, Shan-Haw
    ;
    Huang, Chiung-Hui
    We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of <2 V. Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6 x 10(-11) A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm(2)/Vs, which may create the potential application for high resolution display.
  • Thumbnail Image
    Item type:Item,
    Structural stability of diffusion barriers in thermoelectric SbTe: From first-principles calculations to experimental results
    (2014-03-05)
    Hsu, Hsiao-Hsuan
    ;
    Cheng, Chun-Hu
    ;
    Chiou, Shan-Haw
    ;
    Huang, Chiung-Hui
    ;
    Liu, Chia-Mei
    This study involved developing robust diffusion barrier for n-type antimony telluride (SbTe) thermoelectric devices. Compared to conventional Ni barrier, the mid-band metals of Ta and TaN with favored ohmic-like contact exhibited smaller diffusion tail because of structurally stable interface on SbTe, which have been supported by first-principles calculations and demonstrated by experimental results. Furthermore, the TaN barrier has strong ionic Ta-N bonding and a high total energy of -4.7 eV/atom that could effectively suppress the formation of SbTe-compounds interfacial layer. (C) 2013 Elsevier B. V. All rights reserved.