Browsing by Author "Chiou, Si-Ming"

Now showing 1 - 2 of 2

A Novel Coaxial-Structured Amorphous-Silicon p-i-n Solar Cell With Al-Doped ZnO Nanowires
(2011-07-01)
Li, Hung-Hsien
;
Yang, Po-Yu
;
Chiou, Si-Ming
;
Liu, Han-Wen
;
Cheng, Huang-Chung
A novel coaxial-structured amorphous-silicon (a-Si) p-i-n solar cell with 1-mu m-long low-temperature hydrothermally synthesized Al-doped-ZnO (AZO) nanowires was demonstrated for the first time. The conversion efficiency. increased from 3.92% to 4.27% when the intrinsic a-Si thickness was increased from 25 to 150 nm and then decreased to 3.66% when the intrinsic layer thickness was further increased to 250 nm. It was attributed to an excessively thick intrinsic a-Si layer that would decrease the internal electrical field and interfere with charge separation. With the optimum intrinsic a-Si thickness of 150 nm, the conversion efficiency increased from 4.27% to 4.73% when the AZO wire length was increased from 1 to 2 mu m. Moreover, the proposed coaxial-structured solar cell exhibited a nearly 46% efficiency enhancement over a conventional a-Si thin-film solar cell.
Coaxial-Structured Solar Cells with Silicon Nanostructures
(2012)
Li, Hung-Hsien
;
Chen, Kuan-Heng
;
Chiou, Si-Ming
;
Liu, Han-Wen
;
Juan, Chuan-Ping
Coaxial-structured solar cells with different lengths silicon nanowires (SiNWs) fabricated by e-beam lithography and transformer coupled plasma reactive ion etching (TCP-RIE) were demonstrated in this paper. With the intrinsic amorphous silicon thickness of 15 nm and n-layer thickness of 25 nm, the short-current density and the conversion efficiency of the flat film solar cell were 17.58 mA/cm(2) and 3.16 %, respectively. Furthermore, the short-current density increased from 20.75 to 27.90 mA/cm(2) and the conversion efficiency increased from 3.59 to 4.69 % when the silicon nanowires length was increased from 0.5 to 1 mu m. The proposed coaxial-structured solar cells with SiNWs exhibited nearly 48.42 % efficiency enhancement over the plat film solar cell.