Browsing by Author "Chiou, Uio-Pu"

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Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability
(2013-11-11)
Chiou, Uio-Pu
;
Shieh, Jia-Min
;
Yang, Chih-Chao
;
Huang, Wen-Hsien
;
Kao, Yo-Tsung
We fabricated nano-crystalline Si (nc-Si: H) thin-film transistors (TFTs) with a double-metal-gate structure, which showed a high electron-mobility (mu(FE)) and adjustable threshold voltages (V-th). The nc-Si: H channel and source/drain (S/D) of the multilayered TFT were deposited at 375 degrees C by inductively coupled plasma chemical vapor deposition. The low grain-boundary defect density of the channel layer is responsible for the high mu(FE) of 370 cm(2) /V-s, a steep subthreshold slope of 90 mV/decade, and a low V-th of -0.64 V. When biased with the double-gate driving mode, the device shows a tunable V-th value extending from -1V up to 2.7 V. (C) 2013 AIP Publishing LLC.
Photovoltaic Performance of HWCVD Deposited mu c-Si:H Solar Cells Using Graded Hydrogen Dilution Window-Layer
(2011)
Chiou, Uio-Pu
;
Shieh, Jia-Min
;
Pan, Fu-Ming
;
Huang, Wen-Hsien
;
材料科學與工程學系
The study prepared thin film solar cells using hydrogenated microcrystalline silicon (mu c-Si:H) by hot-wire chemical vapor deposition (HWCVD). Hydrogen dilution profiling was used to deposit the boron-doped p-layer on the SnO(2):F substrate. The mu c-Si:H solar cell with triple hydrogen dilution grades in the p-layer has a high photoconversion efficiency of 4.5% as a result of the improvement in the electrical and the antireflection properties of the cell. The short circuit current (J(sc)) and the open circuit voltage (V(oc)) of the solar cell are 19.7 mA/cm(2) and 450 mV, respectively. The graded hydrogen concentration in the p-layer improves the crystallinity and the antireflection of the absorbing layer (intrinsic layer), thereby enhancing the J(sc). The high V(oc) is ascribed to that a high hydrogen dilution ratio may enhance boron doping in the p-layer leading to the improvement of the V(oc). (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3622290] All rights reserved.