Browsing by Author "Chiu, C. -H."

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Characterization of a Sub-THz Photonic Transmitter Based on a Sep arated-Tran sp o rt-Recombin ation Photodiode
(2007)
Shi, J. -W.
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Li, Yu-Tai
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Pan, Ci-Ling
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Chiu, C. -H.
;
Liu, W. -S.
By incorporating low-temperature-grown GaAs based separated-transport-recombination photodiode with micromachined antenna, such photonic-transmitter can radiate strong sub-THz waves at designed frequency (similar to 500GHz) without using Si-lens. Problems of device saturation under high bias voltage were also eliminated. (C) 2005 Optical Society of America
Ge Nanowire FETs with HfZrOx Ferroelectric Gate Stack Exhibiting SS of Sub-60 mV/dec and Biasing Effects on Ferroelectric Reliability
(2017-01-01)
Su, C. -J.
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Hong, T. -C.
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Tsou, Y. -C.
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Hou, F. -J.
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Sung, P. -J.
Ge nanowire (NW) FETs exhibiting subthreshold swing (SS) of 54 mV/dec at room temperature are demonstrated with ferroelectric HfZrOx (FE-HZO) gate stack for the first time. I-ON/I-OFF ratios higher than 10(7) and 10(6) for p- and n-NWFETs, respectively, have been achieved by adopting the gate-all-around (GAA) configuration. Electrical biasing effects on the HZO ferroelectric reliability have been systematically investigated in this work. It is found that the polarization behavior will degrade with electrical stress time and can be recovered. The Ge HZO FinFET CMOS inverter shows experimentally voltage gain of 24.8 V/V.