Browsing by Author "Chiu, Chao-Chian"
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Item type:Item, Analysis of thermal activation energy for poly-Si TFTs(2005) ;Chiu, Chao-Chian ;Zan, Hsiao-Wen ;Shaw, Er-Kang ;光電工程學系Department of PhotonicsThe conduction behavior of Poly-Si TFTs had been carefully studied by analyzing their activation energy under different bias condition. It is found that the trapping effects dominate grain boundary barrier under small drain bias, while the DIGBL effect was pronounced under high drain bias. Considering both the trapping effects and the DIGBL effects, a new activation energy model has been proposed and verified. The cut-off region activation energy of devices with or without LDD structure was also compared in this paper. The influence of gate bias on leakage current was examined by device simulation results.Item type:Item, Temperature coefficient of diode-connected LTPS poly-Si TFTs and its application on the bandgap reference circuit(2008) ;Lu, Ting-Chou ;Zan, Hsiao-Wen ;Ker, Ming-Dou ;Huang, Wei-MingLin, Kun-ChihThe temperature coefficient (TC) of n-type diode-connected polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated. The relationship between TC and the activation energy is observed and explained. It is also found that TC is not sensitive to the deviation of the laser crystallization energy. On the contrary, channel width can effectively modulate TC. By using the diode-connected poly-Si TFTs with different channel widths, a new bandgap reference circuit for precise analog circuit design on glass substrate is proposed and realized. From the experimental results in a LTPS process, the output voltage reference exhibits a very low TC of 195 ppm/degrees C, between 25 degrees C and 125 degrees C.