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Browsing by Author "Chiu, Fu-Chien"

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    Advance in next Century nanoCMOSFET research
    (2007-10-31)
    Hwang, Huey-Liang
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    Chiou, Yan-Kai
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    Chang, Che-Hao
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    Wang, Chen-Chan
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    Lee, Kun-Yu
    It is well known that Taiwan's IC industry is in the very leading front of the world, and production of 65 nm devices was launched in 2006. Within a few years, the need of high-k dielectrics and metal gates is eminent and truly indispensable. Professor H.L. Hwang (the author) organized 12 professors and 50 graduate students of National Tsing Hua University and Chiao Tung University, and executed this particular project, which is sponsored by the Ministry of Economic Affairs of Republic of China, and is aimed at treating efficiently this problem and transferred the critical technologies to industry in a time frame of 3 years. (C) 2007 Elsevier B.V. All rights reserved.
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    Conduction mechanisms and reliability characteristics in MgO resistive switching memory devices
    (2011)
    Chiu, Fu-Chien
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    Feng, Jun-Jea
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    Shih, Wen-Chieh
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    Cheng, Po-Yueh
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    Huang, Chih-Yao
    In this work, the resistive switching memory devices based on MgO thin film were fabricated and investigated. A forming electric field of about 2.36 MV/cm is required to induce bipolar resistive switching characteristic of the Pt/MgO/Pt metal-insulator-metal (MIM) diodes. At room temperature, the set and reset electric fields are about 1.5 MV/cm and -0.9 MV/cm, respectively. After the electroforming process, the resistance ratio of high resistance state (HRS) and low resistance state (LRS) is on the order of 10(5). The temperature dependence of current density-electric field (J-E) characteristics indicates that the dominant conduction mechanism is the hopping conduction and the Ohmic conduction in HRS and LRS, respectively. Accordingly, the hopping distance, trap energy level, and electron mobility in MgO films are obtained. In addition, the reliability characteristics of program/erase cycling endurance, data retention, and read durability of the MgO-based MIM memory devices were measured.