Browsing by Author "Chiu, Po-Wen"

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Cathodic plasma-induced syntheses of graphene nanosheet/MnO2/WO3 architectures and their use in supercapacitors
(2020-05-10)
Huang, Shih-Yu
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Phuoc-Anh Le
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Yen, Po-Jen
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Lu, Yi-Chun
;
Sahoo, Sumanta Kumar
In this study, we synthesized new 0.01-2 mu m graphene nanosheet/MnO2WO3(G/MnO2/WO3) architectures through an electrochemically induced cathodic plasma process in a single batch at a lower temperature (70 degrees C) and for a shorter time (2 h) than those required for the syntheses of similar structures when using a hydrothermal method. We first obtained 0.01-1 mu m leaf-like graphene (G) nanosheets, then 0.1-0.3 mu m long and approximately 10 nm diameter petiole-like MnO2 nanowires on the G nanosheets, and finally 0.20-2.0 mu m petal-like WO3 on MnO2/G - thereby forming the G/MnO2/WO3 architectures - as evidenced using scanning electron microscopy and transmission electron microscopy. We deciphered the step-wise reaction mechanism behind the formation of the G/MnO2/WO3 architectures during the plasma process. The high surface area of 291 m(2) g(-1) in the G/MnO2/WO3 architecture was contributed mainly by the G nanosheets, providing a suitable surface area for diffusion of the charge carriers during the charging and discharging process. As a result, an electrode incorporating the G/MnO2/WO3 architectures exhibited an excellent specific capacitance of 620 F g(-1) - 45 and 200% higher than those of G/MnO2 (421 F g(-1)) and G (189 F g(-1)) electrodes, respectively - at a current density of 0.5 A g(-1). Moreover, the G/MnO2/WO3-incorporated electrode exhibited good electrochemical cycling stability, with 90% capacitance retention over 5000 cycles at 1 A g(-1). Such new G/MnO2/WO3 heterojunction structures, not only provide high-performance electrode applications, but also suggest a potential approach toward fabricating other heterojunction structures having high surface areas for energy storage applications. (C) 2020 Elsevier Ltd. All rights reserved.
Ferroelectric Control of the Conduction at the LaAlO3/SrTiO3 Heterointerface
(2013-06-25)
Vu Thanh Tra
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Chen, Jhih-Wei
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Huang, Po-Cheng
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Huang, Bo-Chao
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Cao, Ye
Flexible ferroelectric element based on van der Waals heteroepitaxy
(2017-06-01)
Jiang, Jie
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Bitla, Yugandhar
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Huang, Chun-Wei
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Thi Hien Do
;
Liu, Heng-Jui
We present a promising technology for nonvolatile flexible electronic devices: A direct fabrication of epitaxial lead zirconium titanate (PZT) on flexible mica substrate via van der Waals epitaxy. These single-crystalline flexible ferroelectric PZT films not only retain their performance, reliability, and thermal stability comparable to those on rigid counterparts in tests of nonvolatile memory elements but also exhibit remarkable mechanical properties with robust operation in bent states (bending radii down to 2.5 mm) and cycling tests (1000 times). This study marks the technological advancement toward realizing much-awaited flexible yet single-crystalline nonvolatile electronic devices for the design and development of flexible, lightweight, and next-generation smart devices with potential applications in electronics, robotics, automotive, health care, industrial, and military systems.
Graphene-Transition Metal Dichalcogenide Heterojunctions for Scalable and Low-Power Complementary Integrated Circuits
(2020-01-01)
Yeh, Chao-Hui
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Liang, Zheng-Yong
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Lin, Yung-Chang
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Chen, Hsiang-Chieh
;
Fan, Ta
The most pressing barrier for the development of advanced electronics based on two-dimensional (2D) layered semiconductors stems from the lack of site-selective synthesis of complementary n- and p-channels with low contact resistance. Here, we report an in-plane epitaxial route for the growth of interlaced 2D semiconductor monolayers using chemical vapor deposition with a gas-confined scheme, in which patterned graphene (Gr) serves as a guiding template for site-selective growth of Gr-WS2-Gr and Gr-WSe2-Gr heterostructures. The Gr/2D semiconductor interface exhibits a transparent contact with a nearly ideal pinning factor of 0.95 for the n-channel WS2 and 0.92 for the p-channel WSe2. The effective depinning of the Fermi level gives an ultralow contact resistance of 0.75 and 1.20 k Omega.mu m for WS2 and WSe2, respectively. Integrated logic circuits including inverter, NAND gate, static random access memory, and five-stage ring oscillator are constructed using the complementary Gr-WS2-Gr-WSe2-Gr heterojunctions as a fundamental building block, featuring the prominent performance metrics of high operation frequency (>0.2 GHz), low-power consumption, large noise margins, and high operational stability. The technology presented here provides a speculative look at the electronic circuitry built on atomic-scale semiconductors in the near future.
Heteroepitaxy of Fe3O4/Muscovite: A New Perspective for Flexible Spintronics
(2016-12-14)
Wu, Ping-Chun
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Chen, Ping-Fan
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Thi Hien Do
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Hsieh, Ying-Hui
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Ma, Chun-Hao
Spintronics has captured a lot of attention since it was proposed. It has been triggering numerous research groups to make their efforts on pursuing spin-related electronic devices. Recently, flexible and wearable devices are in a high demand due to their outstanding potential in practical applications. In order to introduce spintronics into the realm of flexible devices, we demonstrate that it is feasible to grow epitaxial Fe3O4 film, a promising candidate for realizing spintronic devices based on tunneling magnetoresistance, on flexible muscovite. In this study, the heteroepitaxy of Fe3O4/muscovite is characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy. The chemical composition and magnetic feature are investigated by a combination of X-ray photoelectron spectroscopy and X-ray magnetic circular dichroism. The electrical and magnetic properties are examined to show the preservation of the primitive properties of Fe3O4. Furthermore, various bending tests are performed to show the tunability of functionalities and to confirm that the heterostructures retain the physical properties under repeated cycles. These results illustrate that the Fe3O4/muscovite heterostructure can be a potential candidate for the applications in flexible spintronics.
Oxide Heteroepitaxy for Flexible Optoelectronics
(2016-11-30)
Bitla, Yugandhar
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Chen, Ching
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Lee, Hsien-Chang
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Do, Thi Hien
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Ma, Chun-Hao
The emerging technological demands for flexible and transparent electronic devices have compelled researchers to look beyond the current silicon-based electronics. However, fabrication of devices on conventional flexible substrates with superior performance are constrained by the trade-off between processing temperature and device performance. Here, we propose an alternative strategy to circumvent this issue via the heteroepitaxial growth of transparent conducting oxides (TCO) on the flexible mica substrate with performance comparable to that of their rigid counterparts. With the examples of ITO and AZO as a case study, a strong emphasis is laid upon the growth of flexible yet epitaxial TCO relying muscovite\'s superior properties compared to those of conventional flexible substrates and its compatibility with the present fabrication methods. Besides excellent optoelectro-mechanical properties, an additional functionality of high-temperature stability, normally lacking in the current state-of-the-art transparent flexitronics, is provided by these heterostructures. These epitaxial TCO electrodes with good chemical and thermal stabilities as well as mechanical durability can significantly contribute to the field of flexible, light-weight, and portable smart electronics.
Scalable van der Waals Heterojunctions for High-Performance Photodetectors
(2017-10-18)
Yeh, Chao-Hui
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Liang, Zheng-Yong
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Lin, Yung-Chang
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Wu, Tien-Lin
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Fan, Ta
Atomically thin two-dimensional (2D) materials have attracted increasing attention for optoelectronic applications in view of their compact, ultrathin, flexible, and superior photosensing characteristics. Yet, scalable growth of 2D heterostructures and the fabrication of integrable optoelectronic devices remain unaddressed. Here, we show a scalable formation of 2D stacks and the fabrication of phototransistor arrays, with each photosensing element made of a graphene-WS2 vertical heterojunction and individually addressable by a local top gate. The constituent layers in the heterojunction are grown using chemical vapor deposition in combination with sulfurization, providing a clean junction interface and processing scalability. The aluminum top gate possesses a self-limiting oxide around the gate structure, allowing for a self-aligned deposition of drain/source contacts to reduce the access (litigated) channel regions and to boost the device performance. The generated photo current, inherently restricted by the limited optical absorption cross section of 2D materials, can be enhanced by 2 orders of magnitude by top gating. The resulting photoresponsivity can reach 4.0 A/W under an illumination power density of 0.5 mW/cm(2), and the dark current can be minimized to few picoamperes, yielding a low noise-equivalent power of 2.5 x 10(-16) W/Hz(1/2). Tailoring 2D heterostacks as well as the device architecture moves the applications of 2D-based optoelectronic devices one big step forward.
Scanning Moire Fringe Method: A Superior Approach to Perceive Defects, Interfaces, and Distortion in 2D Materials
(2020-05-26)
Lin, Yung-Chang
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Ji, Hyun Goo
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Chang, Li-Jen
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Chang, Yao-Pang
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Liu, Zheng
Scanning moire fringe (SMF) is a widely utilized technique for the precise measurement of the strain field in semiconductor transistors and heterointerfaces. With the growing challenges of traditional chip scaling, two-dimensional (2D) materials turn out to be ideal candidates for incorporation into semiconductor devices. Therefore, a method to efficiently locate defects and grain boundaries in 2D materials is highly essential. Here, we present a demonstration of using the SMF method to locate the domain boundaries at the nearly coherent interfaces with sub-angstrom spatial resolution under submicron fields of views. The strain field of small angle grain boundary and lateral heterojunction are instantaneously found and precisely determined by a quick SMF method without any atomic resolution images.
Transparent Antiradiative Ferroelectric Heterostructure Based on Flexible Oxide Heteroepitaxy
(2018-09-12)
Ma, Chun-Hao
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Jiang, Jie
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Shao, Pao-Wen
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Peng, Qiang-Xiang
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Huang, Chun-Wei
In the era of Internet of Things, the demand for flexible and transparent electronic devices has shifted to the forefront of materials science research. However, the radiation damage to key performance of transparent devices under radiative environment remains as a critical issue. Here, we present a promising technology for nonvolatile transparent electronic devices based on flexible oxide heteroepitaxy. A direct fabrication of epitaxial lead lanthanum zirconate titanate on transparent flexible mica substrate with indium tin oxide electrodes is presented. The transparent flexible ferroelectric heterostructures not only retain their superior performance, thermal stability, reliability, and mechanical durability, but also exhibit remarkably robust properties against to a strong radiation exposure. Our study demonstrates an extraordinary concept to realize transparent flexible nonvolatile electronic devices for the design and development of next-generation smart devices with potential application in electronics, automotive, aerospace, and nuclear systems.
van der Waal Epitaxy of Flexible and Transparent VO2 Film on Muscovite
(2016-06-14)
Li, Chien-I
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Lin, Jheng-Cyuan
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Liu, Heng-Jui
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Chu, Ming-Wen
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Chen, Hsiao-Wen
Vanadium dioxide (VO2) is a compelling candidate for next-generation electronics beyond conventional silicon-based devices due to the exhibition of a sharp metal insulator transition. In this study, in order to realize functional VO2 film for flexible electronics, the growth of VO2 film directly on a transparent and flexible muscovite via van der Waals epitaxy is established. The heteroepitaxy and structural transition of VO2 films on muscovite are examined by a combination of high resolution X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. The unique metal insulator transition of VO2 is further revealed with a change in electrical resistance over 10(3) and a more than 50% variation of optical transmittance. Furthermore, due to the nature of muscovite, the VO2/muscovite heterostructure possesses superior flexibility and optical transparence. The approach developed in this study paves an intriguing way to fabricate functional VO2 film for the applications in flexible electronics.
Van der Waals epitaxy of functional MoO2 film on mica for flexible electronics
(2016-06-20)
Ma, Chun-Hao
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Lin, Jheng-Cyuan
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Liu, Heng-Jui
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Thi Hien Do
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Zhu, Yuan-Min
Flexible electronics have a great potential to impact consumer electronics and with that our daily life. Currently, no direct growth of epitaxial functional oxides on commercially available flexible substrates is possible. In this study, in order to address this challenge, muscovite, a common layered oxide, is used as a flexible substrate that is chemically similar to typical functional oxides. We fabricated epitaxial MoO2 films on muscovite via pulsed laser deposition technique. A combination of X-ray diffraction and transmission electron microscopy confirms van der Waals epitaxy of the heterostructures. The electrical transport properties of MoO2 films are similar to those of the bulk. Flexible or free-standing MoO2 thin film can be obtained and serve as a template to integrate additional functional oxide layers. Our study demonstrates a remarkable concept to create flexible electronics based on functional oxides. Published by AIP Publishing.