Browsing by Author "Chiu, Wen-Cheng"

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Efficiency Enhancement and Sensitive Broadband 1Hz similar to 1kHz of Power Generator by Recycling Vibration Energy on Automobile
(2012)
Wei, Mao-Qugn
;
Ko, Fu-Hsiang
;
Sun, Tai-Ping
;
Chen, Hsuen-Li
;
Lin, Yung-Bin
Based on novel design of moveable magnet between two mutually inimical magnetic forces without strict fabrication, for the first time, we demonstrate successfully a producible power generator with significant efficiency enhancement at broadband frequency range of 1 Hz similar to 1 kHz, 3D-colis stack-ability for output voltage improvement, and recycling vibration energy on automobile simultaneously. Even though the vibration frequency is as low as 1 Hz, two orders-of-magnitude improvements in normalized power (the ratio of power to product of external force and coil turns) provided from previous reports can be obtained. Further, comparing our device with maturely accelerometer chip (MMA7361) indicates that proposed strategies benefit harvesting vibration energy on driving automobile indeed. This vibrated power generator in-turn provides high potential for applications, such as human motion (1 Hz similar to 2 Hz), sporting (5 Hz similar to 10 Hz), and automotive (10 Hz similar to 1 kHz) etc..
Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft
(2018-01-01)
Li, Kai-Shin
;
Wei, Yun-Jie
;
Chen, Yi-Ju
;
Chiu, Wen-Cheng
;
Chen, Hsiu-Chih
In this work, we use thermal-ALD to prepare ferroelectric HfZrO2 (HZO) thin film with thickness from 3 to 7 nm for the NC-FinFET's gate stack. The subthreshold swing (SS) was as low as 5 mV/dec (SSmin) over 4 orders of I-D. Lower thermal budget process, CO2 far-infrared laser activation and 400 degrees C Ni silicide are employed in the 2-level metal backend integration for maintaining the orthorhombic phase in HZO thin film and minimizing the hysteresis in IV. NC-FinFET inverter has 77% higher voltage gain compared to FinFET-inverter employing HfO2 gate dielectric. NC-FinFET ring oscillator exhibit small speed and power advantages over FinFET oscillator. For the first time, NC-FET cut-off frequency (F-t) frequency is measured, 23.1 GHz or 23% higher than the control FET Ft. NC-FinFET SRAM was observed to exhibit large noise margin.
Threshold Vacuum Switch (TVS) on 3D-Stackable and 4F(2) Cross-Point Bipolar and Unipolar Resistive Random Access Memory
(2012-01-01)
Ho, ChiaHua
;
Huang, Hsin-Hau
;
Lee, Ming-Taou
;
Hsu, Cho-Lun
;
Lai, Tung-Yen
A 3D stackable and bidirectional Threshold Vacuum Switching (TVS) selector using the same WO x material as the RRAM element is reported. It provides the highest reported current density of >10(8) A/cm(2) and the highest selectivity of >10(5). Stress test at high current density indicates >10(8) cycle capability for Reset/Set operation. A mechanism based on recombination of oxygen-ions and vacancies is proposed for the observed volatile switching of TVS. Utilizing the threshold characteristics of the TVS selector, a two-step reading waveform offers potential for 3D-stackable and 4F(2) cross-point RRAM applications.