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Browsing by Author "Chiu, Yi-Chieh"

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    Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devices
    (2013-01-01)
    Chen, Min-Chen
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    Chang, Ting-Chang
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    Chiu, Yi-Chieh
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    Chen, Shih-Cheng
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    Huang, Sheng-Yao
    The devices composed of Pt/TaON/TiN reveal bipolar switching behavior that shows excellent resistance ratio of 10(2) with operations over 100 DC cycles. The formation/disruption of conducting filaments by oxygen anions migration near/at the TiN electrode was applied to explain the switching behavior. In comparison with Pt/TaON/TiN device, the Cu/TaON/TiN device exhibits reversed bipolar resistive switching characteristic. The switching mechanism of Cu/TaON/TiN device is regarded as the Cu redox reaction and migration in the TaON film. Furthermore, the setting voltage of the Cu/TaON/TiN device is lower than that of the Pt/TaON/TiN device due to the confined conduction path by Cu filaments.
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    The resistive switching characteristics in TaON films for nonvolatile memory applications
    (2013-01-15)
    Chen, Min-Chen
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    Chang, Ting-Chang
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    Chiu, Yi-Chieh
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    Chen, Shih-Cheng
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    Huang, Sheng-Yao
    In this study, the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device based on sputter-deposited TaON thin film were investigated. The proposed memory device exhibits excellent resistance switching behavior with a high resistance state to low resistance state ratio of 2.5 order, write/erase endurance of about 1.5 order, and long retention time of 10(4) s at 85 degrees C. In addition, the device was investigated to achieve multilevel operation, which could increase storage density for next generation memory application. It was also found that the polarity of the forming process would not influence the resistive switching characteristic but would affect the first reset process behavior. The switching behavior could be regarded as the oxygen redox near the TiN interface. However, the first reset behavior of negative forming process was related to the oxygen concentration gradients near the Pt electrode and the Joule heating enhanced oxidation. (c) 2012 Elsevier B.V. All rights reserved.