Browsing by Author "Chiu Mao-Yuan"

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Method for manufacturing optoelectronic memory device
(2012-08-21)
Wei Kung-Hwa
;
Sheu Jeng-Tzong
;
Chen Chen-Chia
;
Chiu Mao-Yuan
The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.
Method for measuring optoelectronic memory device
(2013-03-05)
Wei Kung-Hwa
;
Sheu Jeng-Tzong
;
Chen Chen-Chia
;
Chiu Mao-Yuan
A method for measuring an optoelectronic memory device, includes: grounding a source electrode of the optoelectronic memory device; applying a drain electrode voltage to a drain electrode of the optoelectronic memory device and measuring a first current at the drain electrode; using an optical source to illuminate the optoelectronic memory device and measure a first and a second current at the drain electrode; and comparing the sizes of the first current and the second current so as to judge the functional parameters of the optoelectronic memory device.
Optoelectronic memory device and method for manufacturing and measuring the same
(2012-05-15)
Wei Kung-Hwa
;
Sheu Jeng-Tzong
;
Chen Chen-Chia
;
Chiu Mao-Yuan
The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.