Browsing by Author "Chou, CT"

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Effect of fluoroalkyl substituents on the reactions of alkylchlorosilanes with mold surfaces for nanoimprint lithography
(2004-11-01)
Chen, JK
;
Ko, FH
;
Hsieh, KF
;
Chou, CT
;
Chang, FC
We have applied trichloro(3,3,3-trifluoropropyl)silane (FPTS) and trichloro(1H, 1H, 2H, 2H-perfluorooctyl)silane (FOTS) for the preparation of self-assembled film on a silicon mold for use as releasing, antisticking layers for nanoimprint lithography. From contact angle measurements. we have determined the surface energies of the molds in terms of their Lewis acid, Lewis base, and van der Waals components. The surface energies of the FPTS- and FOTS-derived film decreased as the annealing temperature and immersion time increased. Suitable self-assembled films were prepared by annealing at 150 degreesC for at least 1 h. The surface roughnesses of the self-assembled film formed from FPTS and FOTS were 0.468 and 0.189 nm. respectively. The lower surface energy and roughness of the FOTS-derived film on the silicon mold prevent both the adhesion and defect-formation problems from occurring during resist imprinting. The self-assembled films prepared on the mold are resistant to immersion in acid and base, but treatment with oxygen plasma has an adverse effect on these molds' stabilities. (C) 2004 American Vacuum Society.
Evaluation of impurity migration and microwave digestion methods for lithographic materials
(1999)
Ko, FH
;
Hsiao, LT
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Chou, CT
;
Wang, MY
;
Wang, TK
In the section of incoming quality (IQC) or quality reliability analysis (QRA) of advanced semiconductor fabrication company, it is inevitable to regulate the strict standard for the incoming materials to ensure the reliability. In our radioactive tracer study, it is interestingly found the various amounts of metal and trace element impurities in the lithographic materials may migrate into the substrate. Based on the complex organic matrix in lithographic materials such as bottom anti-reflective coating (BARC), I-line resist and DUV resist, it is not easy to direct determine the multi-elements by the instrumentation. In this work, the lithographic materials are first decomposed by the close-vessel and open-focused microwave oven, and the digest is evaporated to incipient dryness. After adding water, the sample solutions are used either for evaluating the completeness of the digestion process by UV-VIS spectrometer, or for the determination of eleven elements using inductively coupled plasma mass spectrometry (ICP-MS). In addition, the digestion efficiency is also evaluated by the weight of total dry residual after various digestion recipes. By the complementary digestion method, the method detection limits for analytes can be achieved at lower than ng/g level. For evaluation of data accuracy, the results obtained by the two independent degestion methods are in good agreement. Moreover, the spiking recovery tests for all the elements are of 70 to 130%. According to the microcontamination control limit predicted by the SIA roadmap, the established method can meet the requirements for the quality control of lithographic materials in the future ten years.
Fabrication of biomimetic super-amphiphobic surfaces through plasma modification of benzoxazine films
(2006-03-03)
Wang, CF
;
Chiou, SF
;
Ko, FH
;
Chou, CT
;
Lin, HC
In this study, a method for producing super-amphiphobic surfaces through plasma modification of benzoxazine films is presented. Microroughening and fluorination of the benzoxazine films occurs during the plasma treatment process and a rugged surface with a micro/nano binary structure is formed. The combined effect of low surface energy and substrate roughness results in high advancing contact angles (157 degrees for water, 152 degrees for diiodomethane) and low contact angle hysteresis.
Film characterization and evaluation of process performance for the modified electron beam resist
(2000)
Ko, FH
;
Ting, JH
;
Chou, CT
;
Hsiao, LT
;
Huang, TY
The modification of the electron beam resist by spiking with various amounts of poly(styrene-co-maleic anhydride) copolymer is performed. The characterization of resist solutions by gel permeation chromatography (GPC) and viscosity measurement reveals the main polymer chain in the resist is unchangeable, irrespective of the amount of modification. In addition, the spiking copolymer exists in original form. The viscosity of the resist increases with the amount of spiking polymer. Our thermal analysis results show that the resists are mainly decomposed in two regions (280 and 544 degrees C). The mass loss at 280 degrees C is significant higher than at 544 degrees C. The spectra of Fourier transform infrared red (FTIR) spectrometer indicate the extent of carbonate group decomposition decreases with temperature for resists. The plasma etching experiment indicates the promotion of etching resistance of the resist film is due to modification, while the resolution, sensitivity and contrast are not degraded. Owing to the polymer aggregation effect, the stripping performance of the resist film can achieve better after copolymer modification.
Low temperature epitaxy of Si and Si1-xGex by utrahigh vacuum-chemical molecular epitaxy
(1997-01-01)
Huang, GW
;
Chen, LP
;
Chou, CT
;
Chen, KM
;
Tseng, HC
Pure Si2H6 and GeH4 are used to grow Si and Si1-xGex epilayers at 550 degrees C by ultrahigh vacuum-chemical molecular epitaxy. 0.1% B2H6 and 100 ppm PH3 diluted in H-2 are used as the p- and n-type dopant gases in Si/Si1-xGex epitaxy. The Ge mole fraction x and the growth rate of Si1-xGex epilayers show very strong dependence on the total source, gas flow rate ([GeH4]+[Si2H6]) and the source gas ratio ([GeH4]/[GeH4]+[Si2H6]). The results can be explained by the relationships of the source fluxes, relative incorporation efficiency at activated surface sites, and hydrogen desorption under different growth conditions. The boron concentration of Si1-xGex increases with increasing GeH4 flow rate by keeping Si2H6 and B2H6 how rates constant. It may be due to the increase of the surface sites which is caused by the increase of the hydrogen desorption rate when a higher Ge mole fraction epilayer is grown. The phosphorus concentrations of Si and Si1-xGex show different behavior with PH3 flux at higher PH3 flow rates while one increases Linearly and the other becomes saturated, respectively. These results can be explained by a model based on the different levels of the effects of phosphorus blocking of surface-activated sites between Si and Si1-xGex epilayers. This effect can also be used to explain the fact that a smaller decrease in the growth rates of Si1-xGex epilayers occurs at a higher PH3 flow rate. (C) 1997 American Institute of Physics.