Browsing by Author "Chou, Ting-Wei"
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Item type:Item, Characteristics of zirconium oxide gate ion-sensitive field-effect transistors(2007-07-01) ;Chang, Kow-Ming ;Chao, Kuo-Yi ;Chou, Ting-Wei ;Chang, Chin-Tien電子工程學系及電子研究所In this study. the zirconium oxide (ZrO2) membrane has been successfully applied as a pH-sensitive layer for ion-sensitive field-effect transistors (ISFETs). It exhibited an excellent response range of 56.7-58.3 mV/pH from the fixed current measurement using HP4156A. The ZrO2 membrane prepared by direct current (DC) sputtering was used as a pH-sensitive film that showed good surface adsorption with oxide and silicon. The pH sensitivities slightly decreased in 1 M NaCl solution; however. the device showed a perfect linear response of 52.5 mV/pH. The linear pH sensitivity response was measured between pH 1 to 13 in a buffer solution that was provided by Riedel-deHan.