Browsing by Author "Chou, Wu-Ching"

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Abnormal hump in capacitance-voltage measurements induced by ultraviolet light in a-IGZO thin-film transistors
(2017-01-09)
Tsao, Yu-Ching
;
Chang, Ting-Chang
;
Chen, Hua-Mao
;
Chen, Bo-Wei
;
Chiang, Hsiao-Cheng
This work demonstrates the generation of abnormal capacitance for amorphous indium-gallium-zinc oxide (a-InGaZnO4) thin-film transistors after being subjected to negative bias stress under ultraviolet light illumination stress (NBIS). At various operation frequencies, there are two-step tendencies in their capacitance-voltage curves. When gate bias is smaller than threshold voltage, the measured capacitance is dominated by interface defects. Conversely, the measured capacitance is dominated by oxygen vacancies when gate bias is larger than threshold voltage. The impact of these interface defects and oxygen vacancies on capacitance-voltage curves is verified by TCAD simulation software. Published by AIP Publishing.
Atomic and electronic aspects of the coloration mechanism of gasochromic Pt/Mo-modified V2O5 smart films: an in situ X-ray spectroscopic study
(2016-02-21)
Lu, Ying-Rui
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Hsu, Hsin-Hua
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Chen, Jeng-Lung
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Chang, Han-Wei
;
Chen, Chi-Liang
In this work, gasochromic pristine and Mo-modified V2O5 thin films were prepared by the sol-gel spin coating method. Both films exhibit excellent gasochromic coloration. Synchrotron grazing incidence X-ray diffraction reveals that the Mo-modified V2O5 thin film is more amorphous than the pristine V2O5 thin film. X-ray absorption spectroscopy (XAS) was utilized to elucidate the modifications of the local electronic and atomic structures that are caused by Mo. In situ soft-XAS and in situ hard-XAS were performed to monitor the effect of the adsorption of dihydrogen on the charge state of vanadium and local atomic rearrangement in the gasochromic thin films. The gasochromic V2O5 film has a significantly pyramid-like oxygen-coordinated environment. However, the Mo-modified film exhibits mixed pyramid- and octahedral-like structures. Analytic results indicate that upon gasochromic coloration, adsorption of hydrogen adds electrons to the V 3d t(2g) orbital, lowering the charge state of vanadium. The films undergo structural modification before the valence is changed. The Mo-modified V2O5 film exhibits faster coloration because the apical V-O bond differs from that in the pristine V2O5 film. This in situ XAS allows real-time monitoring of changes in the element-specific local atomic structure during the gasochromic reaction and enables the elucidation of the gasochromic mechanism.
Au-BINOL Hybrid Nanocatalysts: Insights into the Structure-Based Enhancement of Catalytic and Photocatalytic Performance
(2019-04-10)
Patolla, Shashank Reddy
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Kao, Chen-Rui
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Chen, Guan-Wei
;
Huang, Yu-Cheng
;
Chuang, Yu-Chun
Advances in new systems of organic-inorganic hybrid nanocomposites are less prevalent, owing to a lack of facile strategies for precise control of their structures, compositions, and, hence, their properties. In this work, Au-BINOL hybrid nanocomposites with eccentric and concentric nanostructures were produced. The hybrid nanocomposites containing two distinct moieties of inorganic Au nanocrystals and organic BINOL nanospheres were applied to the catalytic hydrogenation of 4-nitrophenol with NaBH4 in the aqueous phase with and without the illumination of visible light. Here, we demonstrate that the existence of Au-BINOL interfaces offers benefits to their performance. The eccentric nanostructures made with CTAC show the superior activity from large Au-BINOL interfaces formed between the BINOL nano spheres and the faces of Au nanoplates. They further exhibit a high Au localized surface plasmon resonance (LSPR)-enhancement effect on the photoreduction of 4-nitrophenol, which is attributed to the strong LSPR absorption of exposed Au nanocrystals unaffected by the coverage of BINOL shells.
Carrier dynamics in dilute II-VI oxide highly mismatched alloys
(2014)
Lin, Yan-Cheng
;
Chou, Wu-Ching
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Chyi, Jen-Inn
;
Tanaka, Tooru
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電子物理學系
This study explores comprehensively the carrier dynamics in ZnSeO and ZnTeO using photoluminescence (PL) and time-resolved PL spectroscopy. As the O concentration increases, the PL emissions shift toward lower energies. Additionally, the PL lifetime increases with increasing O contents and the decay curves exhibit complex behavior. In the case of ZnSeO, the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. The incorporation of O in ZnTe generates a wide distribution of electron localization below the energy of the E- conduction subband, and these cause broad PL emission and serve as another intermediate band. Electrons in both the E+ and the E- conduction subbands favor rapid relaxation to low energy states. Moreover, temperature-independent long carrier lifetimes (> 130.0 ns) that are induced by localized electrons increase with O concentration.
Carrier generation and recombination dynamics in type-II ZnSeTe/ZnMnSe quantum structures
(2015-07-31)
Lin, Yan-Cheng
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Chou, Wu-Ching
;
電子物理學系
;
Department of Electrophysics
Type-II band alignment structure is coveted in the design of photovoltaic devices, since it is beneficial for the transport of photogenerated carriers. Here we study the generation and recombination dynamics of carriers in a type-II quantum structure composed of ZnSe0.92Te0.08 highly mismatched alloys (HMAs) and Zn0.97Mn0.03Se. The photoinduced holes at the ZnSe0.92Te0.08 HMAs firstly undergo rapid relaxation to the isoelectronic centers above the valence band edge and subsequently recombine with the free electrons in the Zn0.97Mn0.03Se. The long carrier lifetimes over 120 ns induced by spatially indirect excitons that are bound to isoelectronic Te trapping states further increase with increasing temperature.
Carrier relaxation of ZnCdSe/ZnSe quantum wells
(2008-09-01)
Jang, Der-Jun
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Lee, Meng-En
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Chung, Yung-Hsien
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Yang, Chu-Shou
;
Chou, Wu-Ching
The energy relaxations of Zno(0.91)Cd(0.09)Se multiquantum wells and epilayer structures were studied with an ultrafast time-resolved photoluminescence apparatus. The increase in the rise time of photoluminescence with decreasing photon energy and the redshift of the peak energy of time-resolved photoluminescence spectra with the delay time are attributed to the band-filling effect and energy relaxation of hot carriers. The derived carrier temperature decreases rapidly within the first 10 ps after photoexcitation and tit a much slower rate thereafter. The fast carrier cooling can be explained by the longitudinal optical (LO) phonon emissions by carriers through the Frohlich interaction. The obtained effective scattering times of carrier and LO phonons are comparable to the theoretical prediction of 20 fs for multi-quantum well (MQW) of 20 nm well thickness and the epilayer. The slow carrier capture process may account for the long effective scattering time of 35 fs for the MQWs of 5 nm well thickness.
Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si
(2010-11-19)
Lee, Ling
;
Fan, Wen-Chung
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Ku, Jui-Tai
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Chang, Wen-Hao
;
Chen, Wei-Kuo
The optical properties of GaAs nano-wires grown on shallow-trench-patterned Si(001) substrates were investigated by cathodoluminescence. The results showed that when the trench width ranges from 80 to 100 nm, the emission efficiency of GaAs can be enhanced and is stronger than that of a homogeneously grown epilayer. The suppression of non-radiative centers is attributed to the trapping of both threading dislocations and planar defects at the trench sidewalls. This approach demonstrates the feasibility of growing nano-scaled GaAs-based optoelectronic devices on Si substrates.
Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si
(2010-11-19)
Lee, Ling
;
Fan, Wen-Chung
;
Ku, Jui-Tai
;
Chang, Wen-Hao
;
Chen, Wei-Kuo
The optical properties of GaAs nano-wires grown on shallow-trench-patterned Si(001) substrates were investigated by cathodoluminescence. The results showed that when the trench width ranges from 80 to 100 nm, the emission efficiency of GaAs can be enhanced and is stronger than that of a homogeneously grown epilayer. The suppression of non-radiative centers is attributed to the trapping of both threading dislocations and planar defects at the trench sidewalls. This approach demonstrates the feasibility of growing nano-scaled GaAs-based optoelectronic devices on Si substrates.
Cathodoluminescence study of defects in thermal treatment of zinc titanate thin films deposited by a cosputtering process
(2018-05-01)
Chiang, Tun-Yuan
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Tsai, Chien-Huang
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Huang, Ming-Chao
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Wen, Hua-Chiang
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Chou, Wu-Ching
The effects of thermal treatment of polycrystalline ZnO-TiO2 systems on their luminescence emission and phase properties were investigated using ex situ cathodoluminescence and back-scattering electron microscopy. The main features of the spectrum are a blue band at 2.75 eV for the phase of TiO and a complex visible band at 2.18 eV for the phase of ZnO, whose peak intensity depends on the annealing temperature. The spectrum intensity is dominated by the ZnO phase when annealing temperature was 720 degrees C, which is attributed to abnormal grain growth. Competition is observed between the broad band peaked at 2.18 eV and visible band peaked at 2.75 eV as the annealing temperature changed (820 degrees C-920 degrees C). The cathodoluminescence density is gradually governed by the TiO2 phase, and the emission in polychromatic and monochromatic imaging is stronger equally at 920 degrees C. The nucleation of the TiO2 and ZnO grains is present in the backscattering electron images as well.
CdxHg(1x)Te Alloy Colloidal Quantum Dots: Tuning Optical Properties from the Visible to Near-Infrared by Ion Exchange
(2013-04-01)
Gupta, Shuchi
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Zhovtiuk, Olga
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Vaneski, Aleksandar
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Lin, Yan-Cheng
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Chou, Wu-Ching
The energy gap between valence and conduction levels in colloidal semiconductor quantum dots can be tuned via the nanoparticle diameter when this is comparable to or less than the Bohr radius. In materials such as cadmium mercury telluride, which readily forms a single phase ternary alloy, this quantum confinement tuning can also be augmented by compositional tuning, which brings a further degree of freedom in the bandgap engineering. Here it is shown that compositional control of 2.3 nm diameter CdxHg(1x)Te nanocrystals by exchange of Hg2+ in place of Cd2+ ions can be used to tune their optical properties across a technologically useful range, from 500 nm to almost 1200 nm. Data on composition-dependent changes in the optical properties are provided, including bandgap, extinction coefficient, emission energy and spectral shape, Stokes shift, quantum efficiency, and radiative lifetimes as the exchange process occurs, which are highly relevant for those seeking to use these technologically important QD materials.
Circular Polarization Dynamics during Magnetic Polaron Formation in Type-II Magnetic Quantum Dots
(2020-06-11)
Barman, Biplob
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Pientka, James M.
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Murphy, Joseph R.
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Cartwright, Alexander N.
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Chou, Wu-Ching
We used time-resolved photoluminescence spectroscopy to study the circular polarization dynamics of magnetic polarons in type-II (Zn,Mn)Te/ZnSe quantum dots in the presence of an external magnetic field. We investigated the time evolution of the peak energy of the sigma(+) and sigma(-) circularly polarized photoluminescence components and of the circular polarization of the emitted light. We also observed that the value of circular polarization, at long delay times, increases with magnetic field. We found that this system exhibits unexpected characteristics, such as different time scales for the formation of the magnetic polaron, on the one hand, and the evolution of photoluminescence circular polarization, on the other hand. These results are discussed within the framework of a theoretical model developed to describe the dependence of magnetic susceptibility as a function of temperature.
Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistors
(2018-02-01)
Yang, Chung-I
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Chang, Ting-Chang
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Liao, Po-Yung
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Chen, Bo-Wei
;
Chou, Wu-Ching
This paper utilizes electrical analyses and a study of physical mechanisms to investigate metal gate structure-dependent performance in amorphous InGaZnO (a-IGZO) thin-film transistors. The effects of different shielding areas between the IGZO layer and metal gate are investigated. In devices with shorter metal gate lengths, an abnormal rise in capacitance at the off-state in capacitance-voltage (C-V) characteristic curves can be observed. This can be attributed to the stronger electric field induced by the edge of the metal gate under bias sweep when the metal gate length is shorter than the IGZO layer length. Light illumination measurements indicate a negative shift in threshold voltage and an increase in subthreshold-leakage current regardless of relative metal gate length. Moreover, negative threshold voltage shift becomes more severe with a more obvious hump in C-V characteristic curves under back-light illumination of a shorter width device, a phenomenon which has been verified by simulation.
Coordination-induced emission enhancement in gold-nanoclusters with solid-state quantum yields up to 40% for eco-friendly, low-reabsorption nano-phosphors
(2019-03-11)
Huang, Hsiu-Ying
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Cai, Kun-Bin
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Talite, Maria Jessabel
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Chou, Wu-Ching
;
Chen, Po-Wen
Colloidal quantum dots (CQDs) have gained much attention as light-emitting materials for light-conversion nano-phosphors and luminescent solar concentrators. Unfortunately, those CQDs involve toxic heavy metals and frequently need to be synthesized in the hazardous organic solvent. In addition, they suffer from severe solid-state aggregation-induced self-quenching and reabsorption losses. To address these issues, here we prepare Zn-coordinated glutathione-stabilized gold-nanocluster (Zn-GSH-AuNCs) assemblies without involving heavy metals and organic solvent. Unlike GSH-AuNCs dispersed in an aqueous solution with poor photoluminescence quantum yields (PL-QYs, typically similar to 1%), those Zn-GSH-AuNCs powders hold high solid-state PL-QYs up to 40 +/- 5% in the aggregated state. Such Zn-induced coordination-enhanced emission (CEE) is attributed to the combined effects of suppressed non-radiative relaxation and enhanced charge-transfer interaction. In addition, they also exhibit a large Stokes shift, thus mitigating both aggregation-induced self-quenching and reabsorption losses. Motivated by these photophysical properties, we demonstrated white-light emission from all non-toxic, aqueous-synthesis nano-materials.
Depth-Profiling Electronic and Structural Properties of Cu(In,Ga)(S,Se)(2) Thin-Film Solar Cell
(2016-09-14)
Chiang, Ching-Yu
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Hsiao, Sheng-Wei
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Wu, Pin-Jiun
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Yang, Chu-Shou
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Chen, Chia-Hao
Utilizing a scanning photoelectron microscope (SPEM) and grazing-incidence X-ray powder diffraction (GIXRD), we studied the electronic band structure and the crystalline properties of the pentanary Cu(In,Ga)(S,Se)(2) (CIGSSe) thin-film solar cell as a function of sample depth on measuring the thickness-gradient sample. A novel approach is proposed for studying the depth-dependent information on thin films, which can provide a gradient thickness and a wide cross-section of the sample by polishing process. The results exhibit that the CIGSSe absorber layer possesses four distinct stoichiometries. The growth mechanism of this distinctive compositional: distribution formed by a two stage process is described according to the thermodynamic reaction and the manufacturing, process. On the basis of the depth-profiling results, the gradient profiles of the conduction and valence bands were constructed to elucidate the performance of the electrical properties (in this case, V-oc = 620 mV, J(sc) = 34.6 mA/cm(2), and eta = 14.04%); the valence-band maxima (VBM) measured with a SPEM in the spectroscopic mode coincide with this band-structure model, except for a lowering of the VBM observed in the surface region of the absorber layer due to the ordered defect compound (ODC). In addition, the depth-dependent texturing X-ray diffraction pattern presents the crystalline quality and the residual stress for each depth of a thin-film device. We find that the randomly oriented grains in the bottom region of the absorber layer and the different residual stress between the underlying Mo and the absorber interface, which can deteriorate the electrical performance due to peeling-off effect. An anion interstitial defect can be observed on comparing the anion concentration, of the elemental distribution with crystalline composition; a few excess sulfur atoms insert in interstitial sites at the front side of the absorber layer, whereas the interstitial selenium atoms insert at the back side.
Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy
(2011-07-29)
Wong, Yuen-Yee
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Chang, Edward Yi
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Wu, Yue-Han
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Hudait, Mantu K.
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Yang, Tsung-Hsi
A GaN buffer layer grown under Ga-lean conditions by plasma-assisted molecular beam epitaxy (PAMBE) was used to reduce the dislocation density in a GaN film grown on a sapphire substrate. The Ga-lean buffer, with inclined trench walls on its surface, provided an effective way to bend the propagation direction of dislocations, and it reduced the dislocation density through recombination and annihilation processes. As a result, the edge dislocation density in the GaN film was reduced by approximately two orders of magnitude to 2 x 10(8) cm(-2). The rough surface of the Ga-lean buffer was recovered using migration enhanced epitaxy (MEE), a process of alternating deposition cycle of Ga atoms and N(2) radicals, during the PAMBE growth. By combining these two methods, a GaN film with high-crystalline-quality and atomically-flat surface can be achieved by PAMBE on a lattice mismatch substrate. (C) 2011 Elsevier B.V. All rights reserved.
Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors
(2018-01-01)
Yang, Chung-I.
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Chang, Ting-Chang
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Liao, Po-Yung
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Chen, Li-Hui
;
Chen, Bo-Wei
This investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The Vth is found to shift negatively when increasing the ID-VG measurement condition VD from 0.1 to 15 V. The current-voltage curves show that this degradation is caused by the effective channel length (L-eff) being shorter than the mask channel length (L). Using the transmission line method to extract Leff, we discover that the degradation will be completely suppressed by an annealing treatment. As a result, the degradation mechanism of shorter channel length a-IGZO thin film transistors is due to oxygen-vacancies which are located between the channel and the source/drain junction.
Effect of microstructure on the nanomechanical properties of Zn(1-x)Cd(x)Se alloys
(2010-01-15)
Wen, Hua-Chiang
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Yang, Chu-Shou
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Chou, Wu-Ching
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電子物理學系
;
Department of Electrophysics
We present a study of the nanoindentation behavior of Zn(1-x)Cd(x)Se epilayers grown using molecular beam epitaxy; the surface roughness, microstructure, and crystallinity were analyzed using atomic force microscopy, cross-sectional transmission electron microscopy, and X-ray diffraction; the hardness H and elastic modulus E were studied using nanoindentation techniques. We found that these highly crystalline materials possessed no stacking faults or twins in their microstructures. We observed a very marked increase in the value of H and a significant decrease in the value of E upon increasing the concentration of Cd, presumably because of an increase in the stiffness of the CdSe bond relative to that of the ZnSe bond. We observed a corresponding shrinkage of the contact-induced damage area for those films having a small grain size and a higher value of H. It appears that resistance against contact-induced damage requires a higher Cd concentration. (C) 2009 Elsevier B.V. All rights reserved.
Effect of microstructure on the nanomechanical properties of Zn1-xCdxSe alloys
(2010-01-15)
Wen, Hua-Chiang
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Yang, Chu-Shou
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Chou, Wu-Ching
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電子物理學系
;
Department of Electrophysics
We present a study of the nanoindentation behavior of Zn1-xCdxSe epilayers grown using molecular beam epitaxy; the surface roughness, microstructure, and crystallinity were analyzed using atomic force microscopy, cross-sectional transmission electron microscopy, and X-ray diffraction; the hardness H and elastic modulus E were studied using nanoindentation techniques. We found that these highly crystalline materials possessed no stacking faults or twins in their microstructures. We observed a very marked increase in the value of H and a significant decrease in the value of E upon increasing the concentration of Cd, presumably because of an increase in the stiffness of the CdSe bond relative to that of the ZnSe bond. We observed a corresponding shrinkage of the contact-induced damage area for those films having a small grain size and a higher value of H. It appears that resistance against contact-induced damage requires a higher Cd concentration. (C) 2009 Elsevier B.V. All rights reserved.
Effects of growth temperature on InN/GaN nanodots grown by metal organic chemical vapor deposition
(2008-05-15)
Chang, Wen-Hao
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Ke, Wen-Cheng
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Yu, Shu-Hung
;
Lee, Lin
;
Chen, Ching-Yu
InN nanodots grown on GaN by metal organic chemical vapor deposition using conventional growth mode as well as flow-rate modulation epitaxy at various growth temperatures (550-730 degrees C) were investigated. We found that different precursor injection schemes together with the effect of growth temperatures greatly influenced the surface morphology of InN nanodots and their photoluminescence (PL) properties. The sample grown at around 650 degrees C showed the highest growth rate. For samples grown at higher temperatures, the residual carrier concentration was reduced and the PL efficiency was improved. Furthermore, we found that the growth of InN nanodots is still sustainable even at a temperature higher than 700 degrees C while retaining their optical quality. (c) 2008 American Institute of Physics.
Effects of isomeric transformation on characteristics of Alq3 amorphous layers prepared by vacuum deposition at various substrate temperatures
(2007-06-15)
Jian, Zhi-An
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Luo, Ying-Zi
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Chung, Jia-Ming
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Tang, Shiow-Jing
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Kuo, Ming-Chin
Organic tris(8-hydroxyquinoline)aluminum (Alq3) amorphous layers are prepared by vacuum deposition at various substrate temperatures T-sub from 30 to 180 degrees C. The surface morphology and electrical characteristics of these as-deposited layers are studied by atomic force microscopy and current-density versus electric-field (J-E) curves. The temperature dependence of the dark electrical conductivity sigma(T) determined from J-E curves is also examined. These experimental results reveal that the surface and electrical properties of Alq3 amorphous layers deposited at T-sub between 90 and 120 degrees C exhibit an anomalous T-sub dependence. However, this anomalous T-sub dependence is not observed from infrared absorption measurements, and therefore is not the result of chemical degradation. The observed behavior is explained in terms of the property that the vacuum deposition of Alq3 with T-sub between 90 and 120 degrees C involves a thermal interconversion between meridional and facial Alq3 isomers. (c) x 2007 American Institute of Physics.