Browsing by Author "Chu, An-Kuo"

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On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs
(2011-07-01)
Dai, Chih-Hao
;
Chang, Ting-Chang
;
Chu, An-Kuo
;
Kuo, Yuan-Jui
;
Jian, Fu-Yen
This letter systematically investigates the origin of gate-induced floating-body effect (GIFBE) in partially depleted silicon-on-insulator p-type MOSFETs. The experimental results indicate that GIFBE causes a reduction in the electrical oxide field, leading to an underestimate of negative-bias temperature instability degradation. This can be partially attributed to the electrons tunneling from the process-induced partial n(+) polygate. However, based on different operation conditions, we found that the dominant origin of electrons was strongly dependent on holes in the inversion layer under source/drain grounding. This suggests that the mechanism of GIFBE at higher voltages is dominated by the proposed anode electron injection model, rather than the electron valence band tunneling widely accepted as the mechanism for n-MOSFETs.
Unusual Threshold Voltage Shift Caused by Self-Heating-Induced Charge Trapping Effect
(2010)
Jian, Fu-Yen
;
Chang, Ting-Chang
;
Chu, An-Kuo
;
Chen, Te-Chih
;
Chen, Shih-Ching
This article investigates the threshold voltage (V(t)) shift induced by a self-heating effect for n-channel low temperature poly-Si thin film transistors (TFTs) and finds that there is a shift of more than 3 V in the negative direction after a self-heating operation of 100 ms. The negative V(t) shift can be attributed to the charge-trapping effect caused by the holes generated by trap-assisted band-to-band thermionic field emission and trapped in the grain boundary of the poly-Si film substrate. We used lateral body contact structure to verify that this unusual V(t) shift is related to the holes trapped in the substrate. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3290686] All rights reserved.