Browsing by Author "Chu, CJ"

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Effective repair to ultra-low-k dielectric material (k-2.0) by hexamethyidisilazane treatment
(2002-07-01)
Mor, YS
;
Chang, TC
;
Liu, PT
;
Tsai, TM
;
Chen, CW
O-2 plasma ashing is commonly used to remove photoresist. The effect of O-2 plasma ashing on the porous organosilicate glass (CH3SiO1.5)(n), one of the spin-on materials, is investigated. O2 plasma can oxidize the methyl groups in porous organosilicate glass (POSG), which leads to the formation of Si-OH groups. The hydrophilic Si-OH groups will induce moisture uptake so that electrical degradation will occur in POSG film. Pure hexamethyldisilazane (HMDS) vapor (100% HMDS) can react with the Si-OH groups in POSG film. It converts hydrophilic Si-OH groups into hydrophobic Si-O-Si(CH3)(3) groups against moisture uptake. The leakage current density decreases by a factor of 2-3 and the dielectric constant decreases from 3.62 to 2.4 when O-2 plasma-damaged POSG undergoes HMDS treatment at 80degreesC for 15 min. Therefore, HMDS treatment is the effective technique to repair the electrical degradation to POSG film during photoresist stripping processing. (C) 2002 American Vacuum Society.
Effective strategy for porous organosilicate to suppress oxygen ashing damage
(2002-03-01)
Liu, PT
;
Chang, TC
;
Mor, YS
;
Chen, CW
;
Tsai, TM
Photoresist stripping with oxygen plasma ashing destroys numerous functional groups in porous organosilicate glasses (OSGs), This impact makes the porous OSG relatively hydrophilic and causes low-k dielectric degradation, To mitigate these issues, various strategies are investigated to enhance oxygen plasma resistance of the porous OSG. These include physical and chemical procedures. Both structural and electrical analyses are used to determine their efficiency. In addition, an optimum prescription that consists of H, plasma and chemical trimethylchlorosilane treatment is developed in this work. The enhancement of oxygen plasma resistance can provide the porous OSG for practical application in the multilevel interconnection. (C) 2002 The Electrochemical Society.
Trimethylchlorosilane treatment of ultralow dielectric constant material after photoresist removal processing
(2002-10-01)
Chang, TC
;
Mor, YS
;
Liu, PT
;
Tsai, TM
;
Chen, CW
The dielectric properties of organic-porous silica films deteriorate after photoresist removal processing. O-2 plasma ashing has been commonly used to remove photoresist. Nevertheless, the O-2 plasma will destroy the functional groups and induce moisture uptake in porous silica films. In this study, trimethylchlorosilane (TMCS) is used to repair the damage to porous silica caused by the O-2 plasma ashing process. The leakage current and dielectric constant will decrease significantly after the TMCS treatment is applied to damaged porous silica. These experimental results show that the TMCS treatment is a promising technique to repair the damage to porous silica during photoresist removal processing. (C) 2002 The Electrochemical Society.