Browsing by Author "Chu, Cheng Hung"

Now showing 1 - 3 of 3

Applications of plasmonic hotspots on laser-treated AgOx thin film
(2012)
Tseng, Ming Lun
;
Huang, Yao-Wei
;
Hsiao, Min-Kai
;
Huang, Hsin Wei
;
Lin, Yu-Hsuan
The femto-second-laser-treated AgOx thin film is used as the plasmon-active substrate for the applications of surface-enhanced Raman scattering (SERS), molecule sensing, and photocatalyst. The proposed technique is helpful for the solar energy harvest, green energy source, and biosensing with high efficiency and throughput.
Stress-Induced 3D Chiral Fractal Metasurface for Enhanced and Stabilized Broadband Near-Field Optical Chirality
(2019-08-01)
Tseng, Ming Lun
;
Lin, Zhan-Hong
;
Kuo, Hsin Yu
;
Huang, Tzu-Ting
;
Huang, Yi-Teng
Metasurfaces comprising 3D chiral structures have shown great potential in chiroptical applications such as chiral optical components and sensing. So far, the main challenges lie in the nanofabrication and the limited operational bandwidth. Homogeneous and localized broadband near-field optical chirality enhancement has not been achieved. Here, an effective nanofabrication method to create a 3D chiral metasurface with far- and near-field broadband chiroptical properties is demonstrated. A focused ion beam is used to cut and stretch nanowires into 3D Archimedean spirals from stacked films. The 3D Archimedean spiral is a self-similar chiral fractal structure sensitive to the chirality of light. The spiral exhibits far- and near-field broadband chiroptical responses from 2 to 8 mu m. With circularly polarized light (CPL), the spiral shows superior far-field transmission dissymmetry and handedness-dependent near-field localization. With linearly polarized excitation, homogeneous and highly enhanced broadband near-field optical chirality is generated at a stably localized position inside the spiral. The effective yet straightforward fabrication strategy allows easy fabrication of 3D chiral structures with superior broadband far-field chiroptical response as well as strongly enhanced and stably localized broadband near-field optical chirality. The reported method and chiral metasurface may find applications in broadband chiral optics and chiral sensing.
Transferring the bendable substrateless GaN LED grown on a thin C-rich SiC buffer layer to flexible dielectric and metallic plates
(2017-01-21)
Cheng, Chih-Hsien
;
Huang, Tzu-Wei
;
Wu, Chung-Lun
;
Chen, Mu Ku
;
Chu, Cheng Hung
By growing an epitaxial GaN LED on C-rich a-SiC buffer deposited SiO2/Si substrate, the simplified transfer to versatile flexible metallic/dielectric membranes is demonstrated. Both the high growth temperature at 1000 degrees C and the slow deposition rate played important roles in the meticulous MOCVD growth of n-GaN along the surface normal of the a-SiC at the very beginning. High substrate temperature facilitated the refinement of C-rich SiC buffer from amorphous to partially crystalline with (0004)-orientation, which effectively reduces the lattice mismatch between n-GaN and SiC at the interface so as to gradually improve the crystalline n-GaN regrowth. The substrateless GaN LED transferred to flexible copper plates showed reduced turn-on voltage of 2.6 V, enhanced output power of 370 mW, enlarged power-to-current slope of 1.24 W A(-1), increased external quantum efficiency of 45%, and reduced efficiency droop of 15% under a bias of 300 mA. The thermal conductivity of the transferred substrate affected the EL peak wavelength shift of the substrateless GaN LED on SiC buffer. Heating the GaN LED on flexible copper plate to 65 degrees C only reduced its power by 10% and red-shifted its wavelength by 1 nm under a bias at 100 mA; the Auger effect resulted in a degraded EQE of 39.1% and an enlarged EQE droop of 8.5%. Bending the surface diameter of the curvature of the copper plate to 1.2 cm decayed the output power by 12% and red-shifted the EL peak by 5 nm because of the lattice strain induced quantum confined Stark effect (QCSE). Such a bendable substrateless GaN LED transferred to flexible membrane with superior heat dissipation and bending tolerance is a desired lighting element for green photonics in this era.