Browsing by Author "Chu, Li Fen"

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Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing
(2009-12-18)
Sung, Chao-Feng
;
Kekuda, Dhananjay
;
Chu, Li Fen
;
Lee, Yuh-Zheng
;
Chen, Fang-Chung
C60-based thin-film transistors are fabricated through solution processing. On rigid indium tin oxide (ITO) glass, the transistors display electron mobilities as high as 0.21 cm(2) V(-1) s(-1) and a threshold voltage of 0.7V, only slightly lower than those of organic thin-film transistors prepared through vacuum deposition. On ITO-coated PET substrates, the mobilities in the flexible devices (see image) are approximately one order of magnitude lower than those of devices prepared on rigid glass substrates.
Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing (vol 21, pg 4845, 2009)
(2010-12-01)
Sung, Chao-Feng
;
Kekuda, Dhananjay
;
Chu, Li Fen
;
Lee, Yuh-Zheng
;
Chen, Fang-Chung
Hybrid TiO(x)/fluoropolymer bi-layer dielectrics for low-voltage complementary inverters
(2010-01-01)
Sung, Chao-Feng
;
Kekuda, Dhananjay
;
Chu, Li Fen
;
Chen, Fang-Chung
;
Cheng, Shiau-Shin
In this article, low temperature processed, reactively evaporated titanium oxide layers were utilized as gate dielectrics for achieving low voltage driven transistors and complementary inverters. The surface of the gate dielectric was modified by an ultra thin (similar to 30 nm) fluoropolymer Cytop (R) layer which partially helped to reduce the leakage in the dielectric films and also enhanced the organic transistor performance. The current investigation demonstrates the ability of these high capacitance bi-layer dielectrics (k similar to 20). The combined p-type and n-type field-effect transistors show similar saturation mobility similar to 0.3 cm(2)/Vs to achieve low voltage driven complementary circuits with output gain of 22. Low temperature processing of these dielectric layers make them easily integrated. (C) 2009 Elsevier B.V. All rights reserved.
Hybrid TiOx/fluoropolymer bi-layer dielectrics for low-voltage complementary inverters
(2010-01-01)
Sung, Chao-Feng
;
Kekuda, Dhananjay
;
Chu, Li Fen
;
Chen, Fang-Chung
;
Cheng, Shiau-Shin
In this article, low temperature processed, reactively evaporated titanium oxide layers were utilized as gate dielectrics for achieving low voltage driven transistors and complementary inverters. The surface of the gate dielectric was modified by an ultra thin (similar to 30 nm) fluoropolymer Cytop (R) layer which partially helped to reduce the leakage in the dielectric films and also enhanced the organic transistor performance. The current investigation demonstrates the ability of these high capacitance bi-layer dielectrics (k similar to 20). The combined p-type and n-type field-effect transistors show similar saturation mobility similar to 0.3 cm(2)/Vs to achieve low voltage driven complementary circuits with output gain of 22. Low temperature processing of these dielectric layers make them easily integrated. (C) 2009 Elsevier B.V. All rights reserved.