Browsing by Author "Chu, Sheng-Yuan"

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Experimentally Effective Clean Process to C-V Characteristic Variation Reduction of HKMG MOS Devices
(2013)
Chen, Chien-Hung
;
Li, Yiming
;
Chen, Chieh-Yang
;
Chen, Yu-Yu
;
Hsu, Sheng-Chia
In this work, the planar HKMG MOS devices are fabricated on (100) wafer with p-substrate. To improve the samples\' interface roughness between the Si/Ge film and the interface layer, three different clean treatments are considered to fabricate the MOS devices. Among processes, the experiment indicates that HF and water rinse can present hydrogen termination to bond silicon as a good passivation. The measured C-V curves and HRTEM of the fabricated samples show the interface roughness is improved significantly. The extracted shift of flat band voltage (Delta V-fb) and density of interface traps (D-it) have around 50% improvement.
Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices
(2013-09-01)
Chen, Chien-Hung
;
Li, Yiming
;
Chen, Chieh-Yang
;
Chen, Yu-Yu
;
Hsu, Sheng-Chia
In this work, the FinFET HKMG MOS devices are fabricated on silicon wafer with p-substrate. The interface roughness between the SiGe and SiO2 is experimentally extracted and calculated as a function of root mean square by analysis of high resolution transmission electron microscopy. The surface-roughness dependent mobility model is then incorporated into device simulation to study the mobility of SiGe along (110) and (100) orientations of the devices. We further analyze four devices with different surface roughness along (100) and (100) orientations to demonstrate the influence of surface roughness on the total effective mobility. (C) 2013 Elsevier B.V. All rights reserved.
Optical second harmonic generation from the twin boundary of ZnO thin films grown on silicon
(2008-03-03)
Lo, Kuang-Yao
;
Lo, Shih-Chieh
;
Yu, Chang-Feng
;
Tite, Teddy
;
Huang, Jung-Y.
The symmetry of the twin boundaries of ZnO epitaxial film was detected with reflective second harmonic generation (RSHG). The twin boundaries exhibit mirror symmetry with a polar configuration across the boundary plane and yield a nonvanishing polar contribution to RSHG. The nonvanishing second-order susceptibility supports the notion that the measured RSHG originates from the planar defect, which depends on the residual stress in the thin film. We analyzed our RSHG result by correlating the macroscopic data from optic probe with the microscopic data from tunneling electron microscope.