Browsing by Author "Chu, Y-H."
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Item type:Item, Advances in the growth and characterization of magnetic, ferroelectric, and multiferroic oxide thin films(2010-05-20) ;Martin, L. W. ;Chu, Y-H. ;Ramesh, R. ;材料科學與工程學系Department of Materials Science and EngineeringThe growth and characterization of functional oxide thin films that are ferroelectric, magnetic, or both at the same time are reviewed. The evolution of synthesis techniques and how advances in in situ characterization have enabled significant acceleration in improvements to these materials are described. Methods for enhancing the properties of functional materials or creating entirely new functionality at interfaces are covered, including strain engineering and layering control at the atomic-layer level. Emerging applications of these functional oxides such as achieving electrical control of ferromagnetism and the future of these complex functional oxides is discussed. (C) 2010 Elsevier B.V. All rights reserved.Item type:Item, Electric-Field-Induced Magnetization Reversal in a Ferromagnet-Multiferroic Heterostructure(2011-11-14) ;Heron, J. T. ;Trassin, M. ;Ashraf, K. ;Gajek, M.He, Q.A reversal of magnetization requiring only the application of an electric field can lead to low-power spintronic devices by eliminating conventional magnetic switching methods. Here we show a nonvolatile, room temperature magnetization reversal determined by an electric field in a ferromagnet-multiferroic system. The effect is reversible and mediated by an interfacial magnetic coupling dictated by the multiferroic. Such electric-field control of a magnetoelectric device demonstrates an avenue for next-generation, low-energy consumption spintronics.Item type:Item, Magnetotransport at Domain Walls in BiFeO3(2012-02-09) ;He, Q. ;Yeh, C-H. ;Yang, J-C. ;Singh-Bhalla, G.Liang, C-W.Domain walls in multiferroics can exhibit intriguing behaviors that are significantly different from the bulk of the material. We investigate strong magnetoresistance in domain walls of the model multiferroic BiFeO3 by probing ordered arrays of 109 degrees domain walls with temperature-and magnetic-field-dependent transport. We observe temperature-dependent variations in the transport mechanism and magnetoresistances as large as 60%. These results suggest that by locally breaking the symmetry of a material, such as at domain walls and structural interfaces, one can induce emergent behavior with properties that deviate significantly from the bulk.Item type:Item, Microscopic Origin of the Giant Ferroelectric Polarization in Tetragonal-like BiFeO(3)(2011-09-29) ;Zhang, J. X. ;He, Q. ;Trassin, M. ;Luo, W.Yi, D.We report direct experimental evidence for a room-temperature, similar to 130 mu C/cm(2) ferroelectric polarization from the tetragonal-like BiFeO(3) phase. The physical origin of this remarkable enhancement of ferroelectric polarization has been investigated by a combination of x-ray absorption spectroscopy, scanning transmission electron microscopy, and first principles calculations. A large strain-induced Fe-ion displacement relative to the oxygen octahedra, combined with the contribution of Bi 6s lone pair electrons, is the mechanism driving the large ferroelectric polarization in this tetragonal-like phase.Item type:Item, Microscopic Origin of the Giant Ferroelectric Polarization in Tetragonal-like BiFeO3(2011-09-29) ;Zhang, J. X. ;He, Q. ;Trassin, M. ;Luo, W.Yi, D.We report direct experimental evidence for a room-temperature, similar to 130 mu C/cm(2) ferroelectric polarization from the tetragonal-like BiFeO3 phase. The physical origin of this remarkable enhancement of ferroelectric polarization has been investigated by a combination of x-ray absorption spectroscopy, scanning transmission electron microscopy, and first principles calculations. A large strain-induced Fe-ion displacement relative to the oxygen octahedra, combined with the contribution of Bi 6s lone pair electrons, is the mechanism driving the large ferroelectric polarization in this tetragonal-like phase.