Browsing by Author "Chu, YL"

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A new charge-pumping technique for profiling the interface-states and oxide-trapped charges in MOSFET's
(2000-02-01)
Chu, YL
;
Lin, DW
;
Wu, CY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new charge-pumping method has been developed to characterize the hot-carrier induced local damages. By holding the rising and falling slopes of the gate pulse constant and then varying the high-level (V-GH) and base-level (V-GL) voltages, the lateral distribution of interface-states ( N-it (x)) and oxide-trapped charges (Q(ox) (x)) can be profiled. The experimental results show that during extracting Q(ox) (x) after hot-carrier stress, a contradictory result occurs between the extraction methods by varing the high-level (VGH) and base-level (V-GL) voltages. As a result, some modifications are made to eliminate the perturbation induced by the generated interface-states after hot-carrier stress for extracting Q(ox) (x).
A new observation of band-to-band tunneling induced hot-carrier stress using charge-pumping technique
(2000-03-01)
Chu, YL
;
Wu, CY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The lateral distributions of interface-states (N-it) and oxide-trapped charges (Q(ox)) generated by band-to-band tunneling (BTBT) induced hot-carrier stress are analyzed by the new charge-pumping method. It is shown that the interface-states and oxide-trapped charges should be originated from different types of carriers due to the separation of the locations of their peak values. The further evidence of the measured distribution of the interface-states in the band-gap shows that the carriers travelled toward the gate edge would be the dominant carrier for the generation of interface-states while the carriers travelled away from the gate edge will generate oxide-trapped charges through the help of the vertical electric field. These results should be very useful for the reliability analysis of flash memories.
A novel charge-pumping method for extracting the lateral distributions of interface-trap and effective oxide-trapped charge densities in MOSFET devices
(1997-05-01)
Li, HH
;
Chu, YL
;
Wu, CY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A novel charge-pumping method using de source/drain biases and specified gate waveforms is proposed to extract the lateral distributions of interface-trap and effective oxide-trapped charge densities, The surface potential redistribution due to the oxide-trapped charges is treated by an iteration process in order to accurately determine their lateral distributions, The proposed novel method is feasible for accurately extracting the distributions of interface-trap and effective oxide-trapped charge densities generated by the hot-carrier stress and can be further used to predict the device lifetime.
A novel charge-pumping method for extracting the lateral distributions of interface-trap and effective oxide-trapped charge densities in MOSFET devices
(1997-05-01)
Li, HH
;
Chu, YL
;
Wu, CY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A novel charge-pumping method using de source/drain biases and specified gate waveforms is proposed to extract the lateral distributions of interface-trap and effective oxide-trapped charge densities, The surface potential redistribution due to the oxide-trapped charges is treated by an iteration process in order to accurately determine their lateral distributions, The proposed novel method is feasible for accurately extracting the distributions of interface-trap and effective oxide-trapped charge densities generated by the hot-carrier stress and can be further used to predict the device lifetime.
A novel method for extracting the metallurgical channel length of MOSFET's using a single device
(1996-03-01)
Li, HH
;
Chu, YL
;
Wu, CY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new charge-pumping method with de source/drain biases and specified gate waveforms is proposed to extract the metallurgical channel length of MOSFET's by using a single device. Using two charge-pumping currents of a single nMOSFET measured under different V-GL (V-GH for pMOSFET's), the metallurgical channel length can be easily extracted with an accuracy of 0.02 mu m. It is shown that the proposed novel method is self-consistent with the results obtained by the charge-pumping current measured from multidevices under different gate pulse waveforms and bias conditions.