Browsing by Author "Chuang, C. H."

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A Novel One Transistor Non-volatile Memory Feasible for NOR and NAND Applications in IoT Era
(2016)
Chung, Steve S.
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Hsieh, E. R.
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Yang, S. P.
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Chuang, C. H.
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電子工程學系及電子研究所
For the first time, we propose a one transistor nonvolatile memory which can solve the long time charge loss issue incurred in the conventional nitride-storage cell, a hurdle to the scaling of SONOS memory. The SONOS cell uses charge as the storage, while the new invention discloses a cell with one transistor and the gate connected to a simple MIM structure. The readout is from the transistor\'s Vth or I-d, similar to that of flash memory. A bilayer MIM is preferable for best performance. Results demonstrated that this memory exhibits excellent endurance, retention, large window, which can also solve the sneak path and forming issues in conventional crossbar ReRAM. The architecture is fully compatible with the logic CMOS technology and well-suited for both NOR and NAND memories, especially for future embedded applications.
A Novel One Transistor Resistance-Gate Nonvolatile Memory
(2016)
Chung, Steve S.
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Hsieh, E. R.
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Yang, S. P.
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Chuang, C. H.
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電子工程學系及電子研究所
A Novel ReWritable One-Time-Programming OTP (RW-OTP) Realized by Dielectric-fuse RRAM Devices Featuring Ultra-High Reliable Retention and Good Endurance for Embedded Applications
(2018-01-01)
Cheng, H. W.
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Hsieh, E. R.
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Huang, Z. H.
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Chuang, C. H.
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Chen, C. H.
A novel concept of OTP has been demonstrated to create another feasibility to allow re-writable capability before storing the data. This OTP is named ReWritable One-time programming (RW-OTP) memory. With RW-OTP, users can do the test by modifying the contexts repeatedly before finalizing the stored data. To implement the memory cell, it consists of a gate-floated FinFET and an RRAM where a bilayer has been designed as a thicker dielectric layer with resistive-switching property on a thinner dielectric-fuse layer. Moreover, the process of RW-OTP is fully compatible with the state-of-the-art CMOS logic technology. The result shows that the memory cell exhibits high retention and good endurance. With proper use of RW-OTP, the users can not only reduce error jobs cost-efficiently but also can develop various applications for their needs. This memory cell is very promising for embedded applications.
An Innovative 1T1R Dipole Dynamic Random Access Memory (DiRAM) featuring High Speed, Ultra-low power, and Low Voltage Operation
(2016)
Hsieh, E. R.
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Chuang, C. H.
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Chung, Steve S.
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
For the first time, a new 1T1R of volatile memory based on the interfacial dipole flipping mechanism, named as Dipole Dynamic Random Access Memory (DiRAM), has been reported. It features 4ns per bit of dipole switching time, larger than 109 of endurance, and 10 seconds of retention with reasonable positive and negative resistance window, low operation voltages with bit line at 0.8V and word line at 0.2V, and around 1 nano-Watt per bit of operation power. DiRAM is also easy to be integrated with state-of-the-art CMOS technology. The results have shown that this volatile memory may be a potential candidate for the next generation DRAM technology.
Effect of geometry on the magnetic properties of CoFe2O4-PbTiO3 multiferroic composites
(2013)
Wang, B. Y.
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Wang, H. T.
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Singh, Shashi B.
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Shao, Y. C.
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Wang, Y. F.
In this study, X-ray absorption near-edge structure (XANES), extended X-ray absorption fine structure (EXAFS), X-ray magnetic circular dichroism (XMCD) and element-and site-specific magnetic hysteresis (ESMH) are used to elucidate the effect of geometry (0-3- and 2-2-type) on the magnetic properties of CoFe2O4-PbTiO3 (CFO-PTO) multiferroic composites by comparison with those of the reference CFO and PTO powders. Magnetic Co ions in CFO have been confirmed to be located at both the tetrahedral (A)- and octahedral (B)-sites. CFO retains its mixed-spinel structure as verified by the EXAFS, XMCD and ESMH measurements. ESMH measurements further demonstrate that the magnetic moments of Co2+ and Fe3+/Fe2+ cations at both the A-and B-sites in the composites are smaller than those of the CFO powder. The reduction of the magnetic moments in the 2-2-type composite was larger than that in the 0-3-type composite. The reduction of the magnetic moments in the composites was attributable to the formation of anti-phase boundaries owing to the compressive strain in CFO, which is the largest strain in the 2-2-type composite. Based on the Ti L-3,L-2-edge XMCD measurements of the CFO-PTO composites, no induced magnetic moment was observed at the Ti sites in the PTO matrix, excluding the possibility that the Ti ions in the PTO matrix affect the magnetic properties of these CFO-PTO composites.
Local atomic and electronic structures and ferroelectric properties of PbZr(0.52)Ti(0.48)O(3): An x-ray absorption study (vol 99, 042909, 2011)
(2011-11-28)
Ray, S. C.
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Hsueh, H. C.
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Wu, C. H.
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Pao, C. W.
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Asokan, K.
Local atomic and electronic structures and ferroelectric properties of PbZr0.52Ti0.48O3: An x-ray absorption study (vol 99, 042909, 2011)
(2011-11-28)
Ray, S. C.
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Hsueh, H. C.
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Wu, C. H.
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Pao, C. W.
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Asokan, K.
Loycal atomic and electronic structures and ferroelectric properties of PbZr(0.52)Ti(0.48)O(3): An x-ray absorption study
(2011-07-25)
Ray, S. C.
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Hsueh, H. C.
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Wu, C. H.
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Pao, C. W.
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Asokan, K.
This work investigates local atomic and electronic structures of PbZr(0.52)Ti(0.48)O(3) (PZT) thin films with < 001 >, < 101 >, and < 111 > orientations using extended x-ray absorption fine structure (EXAFS) and x-ray absorption near-edge structure (XANES) spectroscopy with theta = 0 degrees and 70 degrees incident angles. The EXAFS result indicates that the < 001 >-oriented PZT film has a polarization dominantly along the c-axis, while both < 101 >- and < 111 >-oriented PZT films have a dominant in-ab-plane polarization. The hysteresis-loop measurements show that the < 001 >-oriented PZT film has a much larger coercive field than those of other two PZT films, which indicates that the double-well potential along the c-axis is much deeper than that in the ab-plane. (C) 2011 American Institute of Physics. [doi:10.1063/1.3607475]
Loycal atomic and electronic structures and ferroelectric properties of PbZr0.52Ti0.48O3: An x-ray absorption study
(2011-07-25)
Ray, S. C.
;
Hsueh, H. C.
;
Wu, C. H.
;
Pao, C. W.
;
Asokan, K.
This work investigates local atomic and electronic structures of PbZr0.52Ti0.48O3 (PZT) thin films with < 001 >, < 101 >, and < 111 > orientations using extended x-ray absorption fine structure (EXAFS) and x-ray absorption near-edge structure (XANES) spectroscopy with theta = 0 degrees and 70 degrees incident angles. The EXAFS result indicates that the < 001 >-oriented PZT film has a polarization dominantly along the c-axis, while both < 101 >- and < 111 >-oriented PZT films have a dominant in-ab-plane polarization. The hysteresis-loop measurements show that the < 001 >-oriented PZT film has a much larger coercive field than those of other two PZT films, which indicates that the double-well potential along the c-axis is much deeper than that in the ab-plane. (C) 2011 American Institute of Physics. [doi:10.1063/1.3607475]