Browsing by Author "Chuang, HF"

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Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies
(1998-01-01)
Chuang, HF
;
Lee, CP
;
Tsai, CM
;
Liu, DC
;
Tsang, JS
We studied the thermal reaction of Pd/In0.52Al0.48As contacts using capacitance-voltage (C-V), current-voltage, Auger electron spectroscopy, and x-ray diffraction analyses and compared the results to those for Pd/Al0.25Ga0.75As and Pd/In0.53Ga0.47As contacts. The thickness of InAlAs consumed by the reaction during annealing was calculated directly from the measured C-V profiles. Pd starts to react with InAlAs at a temperature of 100 degrees C, lower than it does with AlGaAs. For thermally annealed Pd/InAlAs and Pd/AlGaAs, both compositional and structural changes were found at the Pd/semiconductor interface. However, in heat-treated Pd/InGaAs samples, compositional changes but no structural changes were observed. (C) 1998 American Institute of Physics.
Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies
(1998-01-01)
Chuang, HF
;
Lee, CP
;
Tsai, CM
;
Liu, DC
;
Tsang, JS
We studied the thermal reaction of Pd/In0.52Al0.48As contacts using capacitance-voltage (C-V), current-voltage, Auger electron spectroscopy, and x-ray diffraction analyses and compared the results to those for Pd/Al0.25Ga0.75As and Pd/In0.53Ga0.47As contacts. The thickness of InAlAs consumed by the reaction during annealing was calculated directly from the measured C-V profiles. Pd starts to react with InAlAs at a temperature of 100 degrees C, lower than it does with AlGaAs. For thermally annealed Pd/InAlAs and Pd/AlGaAs, both compositional and structural changes were found at the Pd/semiconductor interface. However, in heat-treated Pd/InGaAs samples, compositional changes but no structural changes were observed. (C) 1998 American Institute of Physics.
Thermal reactions of Pd/AlxGa1-xAs contacts
(1996-09-01)
Chuang, HF
;
Lee, CP
;
Tsang, JS
;
Fan, JC
;
電子工程學系及電子研究所
Pd/AlxGa1-xAs Schottky contacts and their thermal reactions are studied by capacitance-voltage measurements, current-voltage measurements, and x-ray diffraction. The thickness of AlxGa1-xAs consumed by the Pd/AlxGa1-xAs reaction during annealing was calculated. For annealing temperatures below 300 degrees C the Schottky characteristics of the diodes were good but the electrical junction moves into AlxGa1-xAs after annealing. The amount of junction movement was calculated directly from our measurements. The diffusion coefficients of Pd in AlxGa1-xAs and the activation energy were estimated. The activation energy was found to be larger for higher Al concentration. PdAl, PdAs2, PdGa5, and Pd5Ga2 were detected in the compounds formed by the Pd/AlxGa1-xAs reaction after annealing. (C) 1996 American Institute of Physics.
Thermal reactions of Pd/AlxGa1-xAs contacts
(1996-09-01)
Chuang, HF
;
Lee, CP
;
Tsang, JS
;
Fan, JC
;
電子工程學系及電子研究所
Pd/AlxGa1-xAs Schottky contacts and their thermal reactions are studied by capacitance-voltage measurements, current-voltage measurements, and x-ray diffraction. The thickness of AlxGa1-xAs consumed by the Pd/AlxGa1-xAs reaction during annealing was calculated. For annealing temperatures below 300 degrees C the Schottky characteristics of the diodes were good but the electrical junction moves into AlxGa1-xAs after annealing. The amount of junction movement was calculated directly from our measurements. The diffusion coefficients of Pd in AlxGa1-xAs and the activation energy were estimated. The activation energy was found to be larger for higher Al concentration. PdAl, PdAs2, PdGa5, and Pd5Ga2 were detected in the compounds formed by the Pd/AlxGa1-xAs reaction after annealing. (C) 1996 American Institute of Physics.