Browsing by Author "Chuang, KC"

Now showing 1 - 3 of 3

<bold>DIRECT HANDWRITING MANIPULATION OF DROPLETS BY SELF-ALIGNED MIRROR-EWOD ACROSS A DIELECTRIC SHEET</bold>
(2006)
Chuang, KC
;
Fan, SK
;
材料科學與工程學系奈米科技碩博班
;
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
In this paper, we demonstrate a novel approach to generate electrowetting on a dielectric sheet over a liquid electrode. A 12.5 pm-thick PVDC film (Saran wrap) was used as the dielectric sheet. Two important phenomena were found: (1) EWOD not only occurs on the manipulated droplet, but also the liquid electrode (mirror-EWOD), (2) the mirror-EWOD causes the manipulated droplet and the liquid electrode self-aligned when they are in comparable sizes. Based on these discoveries, a direct handwriting droplet manipulation platform was designed and fabricated, in which droplets can be transported by a droplet-tipped stylus across a dielectric sheet. PVDC film was also applied in conventional EWOD devices as a disposable dielectric layer.
Direct handwriting manipulation of droplets by self-aligned mirror-EWOD across a dielectric sheet
(2006)
Chuang, KC
;
Fan, SK
;
材料科學與工程學系奈米科技碩博班
;
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
In this paper, we demonstrate a novel approach to generate electrowetting on a dielectric sheet over a liquid electrode. A 12.5 pm-thick PVDC film (Saran wrap) was used as the dielectric sheet. Two important phenomena were found: (1) EWOD not only occurs on the manipulated droplet, but also the liquid electrode (mirror-EWOD), (2) the mirror-EWOD causes the manipulated droplet and the liquid electrode self-aligned when they are in comparable sizes. Based on these discoveries, a direct handwriting droplet manipulation platform was designed and fabricated, in which droplets can be transported by a droplet-tipped stylus across a dielectric sheet. PVDC film was also applied in conventional EWOD devices as a disposable dielectric layer.
High-efficiency and low-distortion directly-ion-implanted GaAs power MESFET's for digital personal handy-phone applications
(1997-09-01)
Lai, YL
;
Chang, EY
;
Chang, CY
;
Tai, MC
;
Liu, TH
We report a high-efficiency and low-distortion GaAs power MESFET using direct ion implantation technology for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz pi/4-shifted quadrature phase shift keying (QPSK) modulated PBS standard signals, the 2.2-V-operation device with a gate width (W-g) of 2 mm exhibited a power-added efficiency (PAE) of 57.2% and an adjacent channel leakage power (P-adj) of -58 dBc at an output power of 21.3 dBm. The MESFET with the optimized direct ion implantation conditions and fabrication process achieved the highest PAE for PHS applications, The low-cost MMIC-oriented direct ion implantation technology has demonstrated the state-of-the-art results for new-generation PHS handsets for the first time.