Browsing by Author "Chuang, Pi Kai"

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Charge storage characteristics of iridium silicide nanocrystals embedded in SiO(2) matrix for nonvolatile memory application
(2010-10-01)
Wang, Terry Tai-Jui
;
Hung, Shih Wei
;
Chuang, Pi Kai
;
Kuo, Cheng Tzu
;
材料科學與工程學系
In this work, the nanostructure-assisted "Al/SiO(2)/Ir-silicide-NCs/SiO(2)/P-Si-sub/Al" stack with iridium silicide nanocrystals (Ir-silicide-NCs) embedded between two SiO(2) layers has been demonstrated in the application of nonvolatile memory for the first time. A significant memory window voltage of 14.2 Vat sweeps of +/- 10 V by capacitance-voltage measurement can be reached, when well-distributed Ir-silicide-NCs are observed in cross-sectional TEM examination. In this case, the trap density is estimated to be about 1.06 x 10(13) cm(-2), indicating a high trapping efficiency stack for nonvolatile memory application. (C) 2010 Elsevier B.V. All rights reserved.
Charge storage characteristics of iridium silicide nanocrystals embedded in SiO2 matrix for nonvolatile memory application
(2010-10-01)
Wang, Terry Tai-Jui
;
Hung, Shih Wei
;
Chuang, Pi Kai
;
Kuo, Cheng Tzu
;
材料科學與工程學系
In this work, the nanostructure-assisted "Al/SiO2/Ir-silicide-NCs/SiO2/P-Si-sub/Al" stack with iridium silicide nanocrystals (Ir-silicide-NCs) embedded between two SiO2 layers has been demonstrated in the application of nonvolatile memory for the first time. A significant memory window voltage of 14.2 Vat sweeps of +/- 10 V by capacitance-voltage measurement can be reached, when well-distributed Ir-silicide-NCs are observed in cross-sectional TEM examination. In this case, the trap density is estimated to be about 1.06 x 10(13) cm(-2), indicating a high trapping efficiency stack for nonvolatile memory application. (C) 2010 Elsevier B.V. All rights reserved.
Development of a high performance integrated sensor chip with a multi-walled carbon nanotube assisted sensing array
(2013-02-01)
Chuang, Pi Kai
;
Wang, Li Chun
;
Kuo, Cheng Tzu
;
材料科學與工程學系
;
Department of Materials Science and Engineering
For room temperature toxic gas sensing, a system chip with a MWCNT (multi-walled carbon nanotube)-assisted array of 30 sensors (two sensors for each of 15 sensor types) was developed. Gases tested include four simulants of chemical warfare agents: dichloromethane, acetonitrile, 2-chloroethyl ethyl sulfide, and dimethyl-methyl phosphonate (DMMP). By selecting 15 different functional polymer materials, each composite sensor composed of 15 sensing stacks (polymer/MWCNTs/Si(001), wafer) was fabricated by a solution droplet casting method to simplify the process. The principle of gas sensing is basically to measure the resistivity change of the composite sensor device upon contact with a target gas. One of the advantages of the sensing stack having a polymer overlayer above the MWCNT layer is being able to protect the MWCNT from direct interaction with the gas to improve sensor life and sensitivity. The results indicate that a fingerprint pattern of the sensor radar plot can be determined for each testing run, and that specificity can be achieved through a 3-D principal component analysis of the radar plots. The results also show that a linear relationship between the resistance response and concentration is clearly evident for these four toxic gases. By extrapolation and careful process monitoring, a sensitivity much lower than 43 ppm for DMMP vapor is likely. The gas sensing mechanisms are discussed in the text. (C) 2012 Elsevier B.V. All rights reserved.