Browsing by Author "Chuang, Shu-Chang"

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Defects in m-plane ZnO epitaxial films grown on (112) LaAlO(3) substrate
(2011-05-01)
Wang, Wei-Lin
;
Peng, Chun-Yen
;
Ho, Yen-Teng
;
Chuang, Shu-Chang
;
Chang, Li
The crystallographic orientations of m-plane ZnO on (112) LaAlO(3) (LAO) substrate are [(1) over bar2 (1) over bar0](ZnO)parallel to[11 (1) over bar](LAO) and [0001](ZnO)parallel to[(1) over bar 10](LAO). The defects in m-plane ZnO have been systematically investigated using cross section and plan-view transmission electron microscopy (TEM). High-resolution TEM observations in cross section show misfit dislocations and basal stacking faults (BSFs) at the ZnO/LAO interface. In the films, threading dislocations (TDs) with 1/3 < 11 (2) over bar0 > Burgers vectors are distributed on the basal plane, and BSFs have 1/6 < 20 (2) over bar3 > displacement vector. The densities of dislocations and BSFs are estimated to be 5.1 x 10(10) cm(-2) and 4.3 x 10(5) cm(-1), respectively. In addition to TDs and BSFs, plan-view TEM examination also reveals that stacking mismatch boundaries mainly lie along the m-planes and they connect with planar defect segments along the r-planes. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3539046]
Defects in m-plane ZnO epitaxial films grown on (112) LaAlO3 substrate
(2011-05-01)
Wang, Wei-Lin
;
Peng, Chun-Yen
;
Ho, Yen-Teng
;
Chuang, Shu-Chang
;
Chang, Li
The crystallographic orientations of m-plane ZnO on (112) LaAlO3 (LAO) substrate are [(1) over bar2 (1) over bar0](ZnO)parallel to[11 (1) over bar](LAO) and [0001](ZnO)parallel to[(1) over bar 10](LAO). The defects in m-plane ZnO have been systematically investigated using cross section and plan-view transmission electron microscopy (TEM). High-resolution TEM observations in cross section show misfit dislocations and basal stacking faults (BSFs) at the ZnO/LAO interface. In the films, threading dislocations (TDs) with 1/3 < 11 (2) over bar0 > Burgers vectors are distributed on the basal plane, and BSFs have 1/6 < 20 (2) over bar3 > displacement vector. The densities of dislocations and BSFs are estimated to be 5.1 x 10(10) cm(-2) and 4.3 x 10(5) cm(-1), respectively. In addition to TDs and BSFs, plan-view TEM examination also reveals that stacking mismatch boundaries mainly lie along the m-planes and they connect with planar defect segments along the r-planes. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3539046]
Effect of growth temperature on a-plane ZnO formation on r-plane sapphire
(2011-05-01)
Peng, Chun-Yen
;
Tian, Jr-Sheng
;
Wang, Wei-Lin
;
Ho, Yen-Teng
;
Chuang, Shu-Chang
The effect of growth temperature on a-plane ZnO formation on r-plane sapphire has been systematically investigated by employing in situ high pressure reflection high-energy electron diffraction, atomic force microscopy, and high-resolution x-ray diffraction. For film growth above and below 600 degrees C, it is shown that there is a significant difference in growth rate and surface morphology due to the differences in the growth mode. Stripelike morphologies were observed on the surface of a-plane ZnO grown at low temperature (LT) because of differences in the growth rate along the c-axis and the growth rate normal to the c-axis. Furthermore, annealing of films grown at low temperature results in more pronounced stripe morphology and in improvement of crystallinity. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3549141]