Browsing by Author "Chuang, Yu-Lin"

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An Au-free GaN High Electron Mobility Transistor with Ti/Al/W Ohmic Metal Structure
(2015)
Yao, Jing-Neng
;
Lin, Yueh-Chin
;
Chuang, Yu-Lin
;
Huang, Yu-Xiang
;
Shih, Wang-Cheng
We demonstrate the Au-free GaN HEMT device with the Ti/Al/W Ohmic metal structure. Excellent surface roughness 4.88nm for Ti/Al/W Ohmic stucture was achieved after metallization. The DC characteristics is comparable with conventional HEMTs and the stress performance with high voltage is better than conventional HEMTs.
Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN (X) Schottky Metal Structures for High-Power Applications
(2016-07)
Hsieh, Ting-En
;
Lin, Yueh-Chin
;
Chu, Chung-Ming
;
Chuang, Yu-Lin
;
Huang, Yu-Xiang
In this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WNx Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore, the Au-free AlGaN/GaN HEMT shows stable device performance after annealing at 400A degrees C. Thus, the Ti/Al/W ohmic and WN (X) Schottky metals can be applied in the manufacturing of GaN HEMT to replace the Au based contacts to reduce the manufacturing costs of the GaN HEMT devices with comparable device performance.
Ti/Pt/Ti/Cu-Metallized Interconnects for GaN High-Electron-Mobility Transistors on Si Substrate
(2012-06-01)
Lin, Yueh-Chin
;
Kuo, Tza-Yao
;
Chuang, Yu-Lin
;
Wu, Chien-Hua
;
Chang, Chia-Hua
Cu-metallized interconnects for GaN high-electron-mobility transistors (HEMTs) on Si substrate using a Pt/Cu diffusion barrier layer are investigated. Auger electron spectroscopy (AES) depth profiles indicate that the GaN/Au/Ti/Pt/Ti/Cu thin metal structure is thermally stable up to 350 degrees C. The Cu-metallized devices using the proposed metal scheme exhibited DC characteristics comparable to those of conventional Au-metallized GaN devices even after annealing at 350 degrees C for 30 min. No degradation in current with time was observed when the device was tested under 28 V high-voltage stress for 24 h at room temperature. These results indicate that the Cu-metallized airbridges with the Ti/Pt/Ti/Cu diffusion barrier layer can be used for GaN HEMT fabrication. (C) 2012 The Japan Society of Applied Physics