Browsing by Author "Chung, H"

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Improvement of post-chemical mechanical planarization characteristics on organic low k methylsilsesquioxane as intermetal dielectric
(2000-11-01)
Liu, PT
;
Chang, TC
;
Huang, MC
;
Yang, YL
;
Mor, YS
This work has investigated the electrical and material characteristics of post-chemical mechanical planarization (CMP) methylsilsesquioxane (MSQ). Experimental results have shown that the dielectric properties of low k MSQ deteriorate after the CMP process. However, by applying H-2-plasma post-treatment, the degraded characteristics can be restored to a similar state as that of a pre-CMP MSQ film. Material and electrical analyses were performed to elucidate the detailed mechanisms of H-2-plasma treatment on post-CMP MSQ. H-2-plasma treatment provides active hydro en radicals to passivate the dangling bonds exposed in the MSQ after the CMP process. The hydrogen-rich passivation layer is hydrophobic and effectively prevents further moisture uptake. Therefore, a degradation-free CMP process can be achieved employing H-2-plasma treatment. (C) 2000 The Electrochemical Society. S0013-4651(00)04-098-2. All rights reserved.