Browsing by Author "Chung, H. L."

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Carrier dynamics in isoelectronic ZnSe(1-x)O(x) semiconductors
(2010-07-26)
Lin, Y. C.
;
Chung, H. L.
;
Chou, W. C.
;
Chen, W. K.
;
Chang, W. H.
This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe(1-x)O(x) (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces induced by isoelectronic O traps, and the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. Complex recombination processes are clarified using the relaxation model based on various decay channels. These findings are consistent with the initial fall in the stretching exponent beta followed by its monotonic increase with increasing temperature. (C) 2010 American Institute of Physics. [doi:10.1063/1.3473776]
Carrier dynamics in isoelectronic ZnSe1-xOx semiconductors
(2010-07-26)
Lin, Y. C.
;
Chung, H. L.
;
Chou, W. C.
;
Chen, W. K.
;
Chang, W. H.
This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe1-xOx (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces induced by isoelectronic O traps, and the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. Complex recombination processes are clarified using the relaxation model based on various decay channels. These findings are consistent with the initial fall in the stretching exponent beta followed by its monotonic increase with increasing temperature. (C) 2010 American Institute of Physics. [doi:10.1063/1.3473776]
Effect of donor-acceptor concentration ratios on nonradiative energy transfer in closely packed CdTe quantum dots
(2009-09-28)
Lin, Y. C.
;
Wang, W. J.
;
Chung, H. L.
;
Chou, W. C.
;
Chen, W. K.
This study investigates the dependence of Forster resonance energy transfer (FRET) on donor-acceptor (D/A) concentration ratios in mixed-size CdTe quantum dots (QDs) films by using photoluminescence (PL) and time-resolved PL spectroscopy. Experimental results indicate that an increasing donor concentration significantly quenches the emission intensity and lifetime in donor QDs and enhances that in acceptor QDs, providing clear evidence of increased FRET efficiency. When D/A ratio exceeds 6, however, the emission intensity and the lifetime of acceptors start to decline, reflecting a decreasing FRET efficiency because of a markedly declining availability of acceptor QDs. (C) 2009 American Institute of Physics. [doi:10.1063/1.3242371]
Optical characterization of isoelectronic ZnSe(1-x)O(x) semiconductors
(2011-05-15)
Lin, Y. C.
;
Chung, H. L.
;
Ku, J. T.
;
Chen, C. Y.
;
Chien, K. F.
We have studied the temperature dependence of the band gap and the decay dynamics of isoelectronic ZnSe(1-x)O(x) (x=0-0.053) semiconductors, using photoluminescence (PL) and time-resolved PL spectroscopy. The temperature dependence of the band gap of ZnSe(1-x)O(x) decreases with the increase in 0 concentration. The Kohlrausch law is in good agreement with the O-induced complex decay profiles. As temperature increases, the mechanism of carrier decay undergoes a complicated change from trapped to free excitons. These findings are consistent with the temperature dependence of the stretching exponent beta. (C) 2010 Elsevier B.V. All rights reserved.
Optical characterization of isoelectronic ZnSe1-xOx semiconductors
(2011-05-15)
Lin, Y. C.
;
Chung, H. L.
;
Ku, J. T.
;
Chen, C. Y.
;
Chien, K. F.
We have studied the temperature dependence of the band gap and the decay dynamics of isoelectronic ZnSe1-xOx (x=0-0.053) semiconductors, using photoluminescence (PL) and time-resolved PL spectroscopy. The temperature dependence of the band gap of ZnSe1-xOx decreases with the increase in 0 concentration. The Kohlrausch law is in good agreement with the O-induced complex decay profiles. As temperature increases, the mechanism of carrier decay undergoes a complicated change from trapped to free excitons. These findings are consistent with the temperature dependence of the stretching exponent beta. (C) 2010 Elsevier B.V. All rights reserved.