Browsing by Author "Chung, H. W."

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Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrate
(2007-02-19)
Hsieh, Y. C.
;
Chang, E. Y.
;
Luo, G. L.
;
Pilkuhn, M. H.
;
Tang, S. S.
Si+ pre-ion-implantation combined with a GexSi1-x metamorphic buffer structure for the growth of Ge layer on Si substrate is proposed. Enhanced strain relaxation of the GexSi1-x metamorphic buffer layer on Si substrate was achieved due to the introduction of the point defects by heavy dose Si+ pre-ion-implantation. Because of the strain relaxation enhancement and the interface blocking of the dislocations in the GexSi1-x metamorphic buffer structure, the total thickness of the buffer layers was only 0.45 mu m. No cross-hatch pattern was observed on the Ge surface and the dislocation density for the top Ge film was only 7.6x10(6) cm(-2). (c) 2007 American Institute of Physics.