Browsing by Author "Chung, Ya-Wei"

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High-performance solution-processed amorphous ZrInZnO thin-film transistors
(2012-10-01)
Chung, Ya-Wei
;
Chen, Fang-Chung
;
Chen, Ying-Ping
;
Chen, Yu-Ze
;
Chueh, Yu-Lun
We have developed amorphous zirconium-indium-zinc-oxide (ZrInZnO) as the channel layer to fabricate thin film transistors through a solution process. The best ZrInZnO transistor exhibited a field effect mobility of 3.80 cm2/Vs, an onoff ratio of similar to 107, a threshold voltage of 0.44 V and a subthreshold swing of 0.42 V/dec. The function of the Zr element was investigated through electrical and thin-film characterization. We found that Zr atoms behaved as effective carrier suppressors and the presence of Zr elements inhibited the crystallization of the InZnO phase. ((c) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Influence of mechanical strain on the electrical properties of flexible organic thin-film transistors
(2011-03-01)
Chen, Fang-Chung
;
Chen, Tzung-Da
;
Zeng, Bing-Ruei
;
Chung, Ya-Wei
;
光電工程學系
In this study, we systematically investigated the bending effect on the electrical properties of flexible organic thin-film transistors (OTFTs) fabricated on stainless steel substrates. We found that the compressive strain resulted in an increased mobility, while the tensile strain degraded the electrical performance. We further used a transfer line method to extract the channel and parasitic resistances under either compressive or tensile strain. The results indicated that the parasitic resistance increased apparently under the tensile bending condition, which probably could be attributed to the damage of the source/drain contacts. Additionally, we deduced that mechanical strains influence the energy barrier height between the grains of pentacene thin films, thereby resulting in the variation of channel resistances. Overall, the flexible OTFTs fabricated on the metal foils exhibited high mechanical flexibility and stability.