Browsing by Author "Chyi, JI"

Now showing 1 - 3 of 3

Liquid phase deposited SiO2 on GaN
(2003-04-29)
Wu, HR
;
Lee, KW
;
Nian, TB
;
Chou, DW
;
Wu, JJH
An efficient and low cost approach to deposit uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) near room temperature are described and discussed. The process is simple. GaN wafers are immersed into a H2SiF6 and H3BO3 solution to form the silicon dioxide layers. The deposition conditions and the properties of the SiO2 films will be characterized. (C) 2002 Elsevier Science B.V. All rights reserved.
Porous silicon light-emitting diode with tunable color
(1997-05-01)
Chen, YA
;
Chen, BF
;
Tsay, WC
;
Laih, LH
;
Chang, MN
We successfully combined porous silicon and amorphous silicon together to fabricate a light-emitting diode, whose emitting color was tunable with different applied voltage. When the applied voltage increased from 30 to 90 V, the emitting color of the device could change from red to blue. (C) 1997 Elsevier Science Ltd.
Separated-transport-recombination p-i-n photodiode for high-speed and high-power performance
(2005-08-01)
Shi, JW
;
Hsu, HC
;
Huang, FH
;
Liu, WS
;
Chyi, JI
We demonstrate a novel p-i-n photodiode (PD) structure, the separated-transport-recombination PD, which can greatly relieve the tradeoffs among the resistance-capacitance bandwidth limitation, responsivity, and output saturation power performance. Incorporating a short carrier lifetime (less than 1 ps) epitaxial layer to serve as a recombination center, this device exhibits superior speed and power performance to a control PD that has a pure intrinsic photoabsorption layer. Our demonstrated structure can also eliminate the bandwidth degradation problem of the high-speed photodetector, whose active photoabsorption layer is fully composed of short lifetime (similar to 1 ps) materials, under high dc bias voltages.