Browsing by Author "DUH, JG"

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A SALT SPRAY TEST ON INTERLAYER-MODIFIED TIN COATING
(1992-06-15)
CHEN, YI
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DUH, JG
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CHIOU, BS
;
YANG, TJ
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電控工程研究所
A ZNO VARISTOR DERIVED FROM METAL-OXIDE DIFFUSION
(1989-06-14)
CHIOU, BS
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CHEN, TC
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DUH, JG
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電控工程研究所
;
Institute of Electrical and Control Engineering
CATALYTIC AND GAS SENSING CHARACTERISTICS IN PD-DOPED SNO2
(1989-09-01)
DUH, JG
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JOU, JW
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CHIOU, BS
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電控工程研究所
;
Institute of Electrical and Control Engineering
CHARACTERISTICS OF PD-DOPED TIN OXIDE CERAMICS IN RESPONSE TO CO GAS
(1988-11-01)
CHIOU, BS
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LI, JJ
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DUH, JG
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電控工程研究所
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Institute of Electrical and Control Engineering
CORROSION BEHAVIOR OF ELECTROLESS NICKEL-PLATING MODIFIED TIN COATING
(1993-09-01)
DOONG, JC
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DUH, JG
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TSAI, SY
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WANG, JH
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CHIOU, BS
TiN films were prepared by reactive r.f. magnetron sputtering on low carbon steel substrates. An electroless Ni-P plating was introduced as the interlayer in the modification of the TiN coating. The corrosion behaviour of the TiN coating assembly was evaluated using the salt spray test and the polarization technique. For a thicker Ni-P interlayer (greater than 5 mum), no appreciable corrosion was observed up to hundreds of hours after salt spray testing. The polarization curve indicates a barrier-type passive film in the TiN/Ni3P/Fe coating assembly. The corrosion currents for TiN/Fe, Ni3P/Fe and TiN/Ni3P/Fe are 200, 40-70 and 6-7 muA cm-2 respectively. It appears that the electroless Ni-P interlayer modified TiN coating has better anticorrosion resistance than pure TiN coating on low carbon steel.
DEHYDRATION OF SYNTHESIZED CALCIA-STABILIZED ZIRCONIA FROM A COPRECIPITATION PROCESS
(1986-09-01)
CHIOU, BS
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HSU, WY
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DUH, JG
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電控工程研究所
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Institute of Electrical and Control Engineering
DEVELOPMENT OF TEMPERATURE-STABLE THICK-FILM DIELECTRICS .3. ROLE OF GLASS ON THE MICROSTRUCTURE EVOLUTION OF A THICK-FILM DIELECTRIC
(1991-09-01)
CHIOU, BS
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LIU, KC
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DUH, JG
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CHUNG, MC
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電子工程學系及電子研究所
Glass phase plays an important role in the characteristics of thick-film microelectronics. A dielectric system in BaTiO3 and SrTiO3 containing PbO, B2O3, SiO2, and Al2O3 glass constituents is investigated. Microstructure evolution and phase distribution after thermal aging are studied with the aid of electron microscope and X-ray diffractometer. It is observed that the phases in 40 vol% BaTiO3-25 vol% SrTiO3-35 vol% glass thick-film dielectric are not altered after 500-degrees-C aging for 480 h. The variation in surface morphology after long time aging is attributed to the precipitation of heavy metal component from the glass which acts as a diffusion species and then dissolves the crystalline phase during firing. The presence of glass in the dielectric enhances the formation of solid solution (Ba(x)Sr1-x)TiO3 and results in the broadening of the Curie peak.
ELECTRICAL BEHAVIOR OF CERIA-STABILIZED ZIRCONIA WITH RARE-EARTH-OXIDE ADDITIVES
(1990-04-01)
CHIOU, BS
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DAI, HT
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DUH, JG
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電控工程研究所
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Institute of Electrical and Control Engineering
EPR EVIDENCE FOR COMPENSATING DEFECTS IN BATIO3 GRAIN-BOUNDARY BARRIER LAYER CAPACITORS
(1990-01-01)
CHIOU, BS
;
LIN, ST
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DUH, JG
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電控工程研究所
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Institute of Electrical and Control Engineering
EQUIVALENT-CIRCUIT MODEL IN GRAIN-BOUNDARY BARRIER LAYER CAPACITORS
(1989-10-01)
CHIOU, BS
;
LIN, ST
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DUH, JG
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CHANG, PH
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電控工程研究所
FABRICATION AND ELECTRICAL BEHAVIOR OF SOL-PRECIPITATE LINBO3 CERAMICS WITH THE ADDITION OF (LIF + MGF2)
(1990-02-01)
CHIOU, BS
;
LIN, TY
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DUH, JG
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電控工程研究所
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Institute of Electrical and Control Engineering
FABRICATION AND PROPERTIES OF ALUMINO-BORO-SILICATE GLASS-CERAMIC SYSTEMS
(1993-12-01)
CHIOU, BS
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TZENG, JM
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DUH, JG
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
In current microelectronics packaging applications, low-temperature fired substrates with low dielectric constant are required. Formulations of SiO2, B2O3, Al2O3, and CaO have been used as substrate materials which can be sintered as low as 1000-degrees-C in air. The electrical behaviour, thermal expansion coefficient, and mechanical property of the fabricated substrate materials are evaluated. The as-sintered substrates possess the following characteristics: low dielectric constant of 4-5 at 1 MHz; a loss factor smaller than 0.2% at 1 MHz; and a thermal expansion of 3.57 x 10(-6)-degrees-C-1 which is very close to that of silicon (3.5 x 10(-6)-degrees-C-1).
INTERFACIAL MORPHOLOGY AND PRE-OXIDATION EFFECT IN DENTAL ALLOY OPAQUE BONDING
(1989-03-01)
DUH, JG
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CHIEN, WS
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CHIOU, BS
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交大名義發表
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National Chiao Tung University
INTERMETALLIC FORMATION ON THE FRACTURE OF SN/PB SOLDER AND PD/AG CONDUCTOR INTERFACES
(1990-06-01)
CHIOU, BS
;
LIU, KC
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DUH, JG
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PALANISAMY, PS
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電控工程研究所
LIQUID-PHASE BONDING OF YTTRIA-STABILIZED ZIRCONIA WITH CAO-TIO2-SIO2 GLASS
(1995-03-01)
CHIOU, BS
;
YOUNG, CD
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DUH, JG
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
A 36.8wt % CaO-26.2 wt % TiO2-37.0 wt % SiO2 glass (CTS) was employed as the ceramic brazer for the bonding of 3 mol % yttria stabilized zirconia (YSZ3). Sandwich-like YSZ3-CTS-YSZ3 specimens were fabricated and temperature dependence of the bonding strength was evaluated. An optimum bonding process was achieved at a bonding temperature of 1424 degrees C for 30 min with CTS glass slurry having a glass/organic ratio of 1.82. The effects of processing parameters on the bending was investigated on the basis of the metallurgical evolution at the interface. In addition, predominating factors affecting the bonding strength were also explored.
METALLIZATION OF ALUMINUM NITRIDE SUBSTRATES BY ELECTROLESS COPPER PLATING
(1993-06-01)
CHIOU, BS
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CHANG, JH
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DUH, JG
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電控工程研究所
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Institute of Electrical and Control Engineering
The metallization of AIN substrates by electroless Cu plating was investigated for as-received unpolished and mechanically polished AIN substrates. Four-percent NaOH aqueous solution was employed as the chemical etchant before plating to create sites for mechanical interlocking. For the unpolished substrates, the adhesion increased from 1.3 kg/MM2 for the sample with an average surface roughness of 0.2 mum to 2.3 kg/MM2 for those with an average surface roughness of 0.82 mum. Mechanical interlocking is suggested as the major cause for adhesion in the Cu-unpolished AIN system. The adhesion strength of Cu with respect to the mechanically polished AIN substrate increases to a value larger than 7.6 kg/mm2. This makes electroless Cu plating a good candidate for AIN metallization. Nevertheless, the mechanism that causes the increased adhesion strength for the mechanically polished case needs further investigation.
METALLURGICAL REACTIONS AT THE INTERFACE OF SN/PB SOLDER AND ELECTROLESS COPPER-PLATED ALN SUBSTRATE
(1995-08-01)
CHIOU, BS
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CHANG, JH
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DUH, JG
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
Intermetallic formation between electroless-plated copper and Sn/Pb solder is investigated. An interlayer is formed between copper and solder, and segregation of Pb-rich and Sn-rich phases are observed. X-ray diffraction and EDX analysis results suggest that the major intermetallic formed in the interlayer is Cu6Sn5. For the as-plated sample, the adhesion strength of Cu to the AIN substrate after 150 degrees C aging is affected by both the recrystallization and the creep of copper. For the soldered specimen, the presence of intermetallic compound causes cracks to propagate along the intermetallic/Cu interface and results in a decrease of the adhesion strength.
MICROSTRUCTURE AND PROPERTIES OF MULTILAYER-DERIVED TUNGSTEN SILICIDE
(1987-07-01)
CHIOU, BS
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RAU, HL
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CHANG, PH
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DUH, JG
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電控工程研究所
MORPHOLOGY AND ADHESION STRENGTH IN ELECTROLESS CU METALLIZED ALN SUBSTRATE
(1993-12-01)
CHANG, JH
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DUH, JG
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CHIOU, BS
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電控工程研究所
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Institute of Electrical and Control Engineering
The metallization of aluminum nitride substrates by electroless copper plating is investigated. The AIN substrate is etched by 4% NaOH to study the correlation between the adhesion strength and the surface roughness of etched AIN substrate. Both the as-received nonpolished and then polished AIN are employed herein. For the nonpolished substrate, the adhesion strength increases from 130 kg/cm2 for the sample with an average surface roughness of 0.2 mum to 230 kgf/cm2 for the one with an average surface roughness of 0.82 mum. For the polished substrate, the adhesion strength reaches 271 kg/cm2 with a surface roughness of 0.19 mum. Mechanical interlocking is the major cause for the adhesion strength between the Cu and AIN substrates. The polished substrate followed by etching could form fine cavities on the AIN surface, and the microetching effect results in a stronger mechanical interlocking, which increase the adhesion strength.
MORPHOLOGY, STRENGTH AND PRE-COATING EFFECT IN YSZ/NI BONDING
(1990-05-01)
DUH, JG
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WU, YC
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CHIOU, BS
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電子物理學系
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Department of Electrophysics