Browsing by Author "De Wang, S"

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Mechanism of on-current and off-current instabilities under electrical stress in polycrystalline silicon thin-film transistors
(2005)
De Wang, S
;
Chang, TY
;
Lo, WH
;
Lei, TF
;
電子工程學系及電子研究所
The On-current (I(on)) and Off-current (I(off)) instabilities of polycrystalline silicon thin-film transistors (poly-Si TFTs) were investigated under various electrical stress conditions. The stress-induced device degradation was studied by measuring the dependences of I(on) and I(off) on the drain/gate voltages. Using this technique, dissimilar variations of I(on) and I(off) after stress were observed. The differences can be attributed to the variances in the amount of charges trapped in the gate oxide and the spatial distributions of the trap states generated in the poly-Si channel. These results suggested a comprehensive model for the I(on) and I(off) instabilities of poly-Si TFTs.
Performance and reliability of poly-Si TFTs on FSG buffer layer
(2005-07-01)
De Wang, S
;
Chang, TY
;
Chien, CH
;
Lo, WH
;
Sang, JY
A novel and process-compatible scheme for fabricating poly-Si thin-film transistors (TFTs) on an FSG buffer layer was proposed and demonstrated. Experimental results reveal that remarkably improved device performance and uniformity can be achieved with appropriate fluorine concentration. The poly-Si TFTs fabricated on FSG layers have a higher on-current, a lower leakage current, and a higher field-effect mobility compared with the conventional poly-Si TFTs. Furthermore, the incorporation of fluorine also increased the reliability of poly-Si TFTs against hot carrier stressing, which is attributed to the formation of Si-F bonds.