Browsing by Author "Deng, C. K."

Now showing 1 - 4 of 4

High-kappa TiCeO MIM Capacitors with a Dual-Plasma Interface Treatment
(2010)
Cheng, C. H.
;
Hsu, H. H.
;
Hsieh, I. J.
;
Deng, C. K.
;
Chin, Albert
In this study, we successfully fabricated high-kappa Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual-plasma treatment on a bottom TaN electrode. The plasma treatment suppressed the growth of the bottom interfacial layer to largely improve capacitor performance at a 400 C thermal budget. The Ir/TiCeO/TaN MIM capacitor achieved a high capacitance density of similar to 17 fF/mu m(2) at a 22 nm thickness and a low quadratic coefficient of capacitance (VCC-alpha) of 866 ppm/V(2) at a 10.3 fF/mu m(2) density. The good performance is due to the combined effects of a dual-plasma interface treatment, higher-kappa TiCeO dielectrics, and a high work-function Ir metal. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3294495] All rights reserved.
Improved Lower Electrode Oxidation of High-kappa TiCeO Metal-Insulator-Metal Capacitors by Using a Novel Plasma Treatment
(2008)
Cheng, C. H.
;
Hsu, H. H.
;
Deng, C. K.
;
Chin, Albert
;
Chou, C. P.
We have fabricated high-kappa Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual plasma treatment on bottom electrode. The novel plasma treatment suppresses the growth of bottom interfacial layer to reduce the degradation of capacitor performance under 400 degrees C PDA. A low leakage current of 1.7x10(-7) A/cm(2) at -1 V and capacitance density of similar to 18 fF/mu m(2) at 1 MHz were obtained for 21 nm thick TiCeO MIM devices; moreover, a 37 nn thick TiCeO film has a capacitance density of 11 fF/mu m(2), which gives a kappa value of 45. Consequently, the excellent device performance is due to the combined effects of the dual plasma treatment, high-kappa TiCeO dielectric and a high work-function Ir metal.
Lanthanide-Oxides Mixed TiO(2) Dielectrics for High-kappa MIM Capacitors
(2010-01-01)
Cheng, C. H.
;
Deng, C. K.
;
Hsu, H. H.
;
Chen, P. C.
;
Liou, B. H.
We proposed two lanthanide-oxide mixed TiO(2) dielectrics for metal-insulator-metal (MIM) capacitors using TiO(2)-LaAlO (TLAO) and TiO(2)-LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/mu m(2) with a low leakage current of 1.4 x 10(-7) A/cm(2) was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO(2) dielectrics with the introduction of LaAlO(3) and LaYO might be promising for MIM capacitors. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3439668] All rights reserved.
Lanthanide-Oxides Mixed TiO2 Dielectrics for High-kappa MIM Capacitors
(2010-01-01)
Cheng, C. H.
;
Deng, C. K.
;
Hsu, H. H.
;
Chen, P. C.
;
Liou, B. H.
We proposed two lanthanide-oxide mixed TiO2 dielectrics for metal-insulator-metal (MIM) capacitors using TiO2-LaAlO (TLAO) and TiO2-LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/mu m(2) with a low leakage current of 1.4 x 10(-7) A/cm(2) was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO2 dielectrics with the introduction of LaAlO3 and LaYO might be promising for MIM capacitors. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3439668] All rights reserved.