Browsing by Author "Do, Huy-Binh"

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Impact of Q-Time on the Passivation of Al2O3/p-In0.53Ga0.47As Interfaces Using Various Surface Treatments
(2014)
Luc, Quang-Ho
;
Chang, Edward Yi
;
Trinh, Hai-Dang
;
Wong, Yuen-Yee
;
Do, Huy-Binh
In this article, we demonstrate the influences of atmosphere exposure duration between extrinsic chemical treatment and ALD chamber loading (Q-time) on the passivation effect of the Al2O3/p-In0.53Ga0.47As interfaces. With the use of various chemical solutions and TMA pretreatment, nice capacitance-voltage (C-V) characteristics of Al2O3/p-In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) were obtained with different Q-times before the ALD-Al2O3 deposition. This confirms that Q-time is not the critical issue determining the Al2O3/In0.53Ga0.47As interface quality. X-ray photoelectron spectroscopy (XPS) analyzes in conjunction with the electrical characterizations have implied that the InGaAs native oxides might not play a major role on the interface trap states formation. (C) 2014 The Electrochemical Society. All rights reserved.
STUDY ON THE ELECTRICAL CHARACTERISTICS OF IN SITU PEALD-PASSIVATED HFO2/IN(0.53)GA(0.47)AS MOSCAP AND MOSFET STRUCTURES
(2016)
Luc, Quang-Ho
;
Chang, Po-Chun
;
Do, Huy-Binh
;
Lin, Yueh-Chin
;
Chang, Edward Yi
In situ PEALD processes, including PEALD-A1N pre-gate and post-gate plasma gas treatments, have been studied as a promising passivation method to realize the high interfacial quality of high-k/III-V structures. The formation of excellent dielectric gate stack has been obtained on the HfO2/n, p-In0.53Ga0.47As MOSCAPs by inserting an A1N interfacial layer. The improvements on the electrical properties of HfO2/In0.53Ga0.47As nMOSFET such as maximum drain current, subthreshold swing, off leakage current, and effective electron mobility have been achieved. Utilizing low frequency noise, charge pumping, and bias temperature instability stress technologies, the reliability of the in situ PEALD-passivated HfO2/In0.53Ga0.47As nMOSFET is evaluated.