Browsing by Author "Du, Xiaoqin"

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Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory
(2017-09-01)
Wu, Cheng-Hsien
;
Pan, Chih-Hung
;
Chen, Po-Hsun
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
In this study, we demonstrate a forming technique that enables us to control whether the switching layer of a Pt/In2O3/TiN device is near the Pt electrode or the TiN electrode. This means that In2O3-based resistive random access memory (RRAM) can be switched at either the active or inert electrode. The resistive switching current-voltage (I-V) curves for both electrodes exhibit stable memory windows. Through material and electrical analyses, we found that the reason for switching at the inert electrode is the oxygen-vacancy-rich characteristic of In2O3. Finally, a physical model is proposed to explain this phenomenon. (C) 2017 The Japan Society of Applied Physics
Recovery of failed resistive switching random access memory devices by a low-temperature supercritical treatment
(2017-06-01)
Du, Xiaoqin
;
Wu, Xiaojing
;
Chang, Ting-Chang
;
Chang, Kuan-Chang
;
Pan, Chih-Hung
The successful recovery of resistive switching random access memory (RRAM) devices that have undergone switching failure is achieved by introducing a low-temperature supercritical-fluid process that passivates the switching layer. These failed RRAM devices, which are incapable of switching between high-and low-resistance states, were treated with supercritical carbon dioxide with pure water at 120 degrees C for 1 h. After the treatment, the devices became operational again and showed excellent current-voltage (I-V) characteristics and reliability as before. On the basis of the current conduction mechanism fitting results, we propose a model to explain the phenomenon. (C) 2017 The Japan Society of Applied Physics