Browsing by Author "Duh, DS"

Now showing 1 - 5 of 5

High-performance microwave coplanar bandpass and bandstop filters on Si substrates
(2003-09-01)
Chan, KT
;
Chin, A
;
Li, MF
;
Kwong, DL
;
McAlister, SP
High-performance bandpass and bandstop microwave coplanar filters, which operate from 22 to 91 GHz, have been fabricated on Si substrates. This was achieved using an optimized proton implantation process that converts the standard low-resistivity (similar to10 Omega (.) cm) Si to a semi-insulating state. The bandpass filters consist of coupled lines to form a series resonator, while the bandstop filter was designed in a double-folded short-end stub structure. For the bandpass filters at 40 and 91 GHz, low insertion loss was measured, close to electromagnetic simulation values. We also fabricated excellent bandstop filters with very low transmission loss of similar to1 dB and deep band rejection at both 22 and 50 GHz. The good filter performance was confirmed by the higher substrate impedance to ground, which was extracted from the well-matched S-parameter equivalent-circuit data.
Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation process
(2003-11-01)
Chan, KT
;
Chin, A
;
Lin, YD
;
Chang, CY
;
Zhu, CX
We have improved the performance of integrated antennas on Si for possible application in wireless communications and wireless interconnects. For practical VLSI integration, we have reduced the antenna size and optimized the proton implantation to a low energy of similar to 4 MeV with a depth of similar to 175 mum. To avoid any possible contamination, the ion implantation is applied after device fabrication. Excellent performance such as very low RF power loss up to 50 GHz, record high 103 GHz antenna resonance, and sharp 5 GHz bandwidth have been achieved.
Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process
(2003)
Chan, KT
;
Chin, A
;
McAlister, SP
;
Chang, CY
;
Tseng, C
Very low power loss less than or equal to 0.6 dB at 110 GHz and noise of < 0.25 dB at 18 GHz have been measured on transmission lines fabricated on Si substrates and implanted with proton. In contrast, much worse power loss of 5 dB and higher noise of 2.5 dB were measured without implantation. This large improvement arises from the high resistivity by proton implantation, which was also done after forming the transmission lines and at a reduced energy of similar to 4 MeV for easier process integration into current VLSI technology.
Microwave coplanar filters on Si substrates
(2003)
Chan, KT
;
Chin, A
;
Kuo, JT
;
Chang, CY
;
Duh, DS
High performance band-pass and band-stop microwave coplanar filters operating from 22 to 94 GHz have been realized on Si substrate using proton implantation process. Very good insertion loss and filter characteristics close to ideal E-M simulation are. measured that demonstrates the excellent filter performance to 91 GHz.
RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation
(2003)
Chin, A
;
Chan, KT
;
Huang, CH
;
Chen, C
;
Liang, V
High quality RF inductors, very low loss and noise CPW and microstrip lines, advanced broad and narrow band filters, and ring resonators have been achieved on Si substrates, using an optimized proton implantation process. The RF performance up to 100 GHz is close to that for ideal devices designed by EM simulation for lossless substrates.