Browsing by Author "FANG, YK"

Now showing 1 - 8 of 8

A HYDROGENATED AMORPHOUS SI/SIC HETEROJUNCTION PHOTOTRANSISTOR
(1989-10-01)
HONG, JW
;
CHEN, YW
;
CHANG, KC
;
FANG, YK
;
CHANG, CY
AMORPHOUS SI/SIC PHOTOTRANSISTORS AND AVALANCHE PHOTODIODES
(1991-06-01)
CHANG, CY
;
HONG, JW
;
FANG, YK
;
交大名義發表
;
National Chiao Tung University
The device structures, operation principles, optoelectronic characteristics, performance comparisons, and possible applications for various a-Si:H/a-SiC:H phototransistors and avalanche photodiodes are reviewed. Although these devices are made of amorphous semiconductors, its majority-carrier transport properties can tactfully avoid gap-state and defect related minority-carrier transport problems, and obtain good performances. Also, each of these devices has the distinct advantage of meeting the requirements of different practical applications. The unique and distinct advantages of these a-Si:H/a-SiC:H devices are first, a variety of peak response wavelengths are achievable by changing the composition or the well-to-barrier widths of the superlattice, secondly, a large-area-detector image sensor can be made on a glass substrate; and thirdly, the low-temperature of the amorphous films (approximately 250-degrees-C) possesses a very abrupt composition change and a doping profile, which are impossible in the single-crystalline semiconductors.
AMORPHOUS-SILICON SILICON-CARBIDE SUPERLATTICE AVALANCHE PHOTODIODES
(1988-08-01)
JWO, SC
;
WU, MT
;
FANG, YK
;
CHEN, YW
;
HONG, JW
ELECTRICAL AND OPTICAL CHARACTERISTICS OF AN A-SI-H/C-SI HETEROJUNCTION SWITCH
(1990-08-01)
CHEN, YW
;
FANG, YK
;
LEE, HD
;
CHANG, CY
;
電控工程研究所
HYDROGENATED AMORPHOUS SI/SIC SUPERLATTICE PHOTOTRANSISTORS
(1991-02-01)
WU, MT
;
FANG, YK
;
HONG, JW
;
CHANG, CY
;
電控工程研究所
In order to improve the performance of the a-Si:H phototransistor (PT) and the a-Si:H/a-SiC:H heterojunction phototransistor (HPT), the a-Si:H/a-SiC:H superlattice (SL) was used for the collector regions of these two devices individually. The resulting superlattice phototransistor (SLPT) and superlatice heterojunction phototransistor (SHPT) were successfully fabricated. Due to the avalanche multiplication in the interpolated a-Si:H/a-SiC:H SL region, the optoelectronic characteristics of the SLPT and the SHPT are considerably better than those of PT and HPT. The SLPT has high photocurrent response and an optical gain as high as 287, when V(CE) = 14 V, I(c) = 0.74 mA, and P(in) (incident power) = 5-mu-W emitted from He-Ne laser. This is the highest optical gain obtainable for various amorphous phototransistors yet reported. The typical shapes of the photo I-V curves for SHPT are much like those of the crystalline-Si (c-Si) phototransistor. This indicates the SHPT is suitable for analog circuits in optoelectronic applications. The SHPT has a maximum optical gain of 78, when V(CE) = 30 V, I(c) = 0.208 mA, and P(in) = 5-mu-W. The response time for SHPT and SLPT are repectively 4.1 +/- 0.1-mu-s and 6.2 +/- 0.1-mu-s at a load resistance R(L) = 1 k-omega.
OPTICAL AND NOISE CHARACTERISTICS OF AMORPHOUS SI/SIC SUPERLATTICE REACH-THROUGH AVALANCHE PHOTODIODES
(1990-08-01)
HONG, JW
;
LAIH, WL
;
CHEN, YW
;
FANG, YK
;
CHANG, CY
THE HYDROGENATED AMORPHOUS-SILICON REACH-THROUGH AVALANCHE PHOTODIODES (A-SI-H RAPDS)
(1990-02-01)
HONG, JW
;
CHEN, YW
;
LAIH, WL
;
FANG, YK
;
CHANG, CY
THRESHOLD SWITCHING TRANSIENT IN METAL A-SI-H C-SI(P-N) (MASS) HETEROJUNCTION DEVICE
(1990-04-01)
CHEN, YW
;
FANG, YK
;
LEE, HD
;
CHANG, CY
;
電控工程研究所