Browsing by Author "Fan, L-S"

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A BIOCOMPATIBLE AND FLEXIBLE RF CMOS TECHNOLOGY AND THE CHARACTERIZATION OF THE FLEXIBLE MOS TRANSISTORS UNDER BENDING STRESSES
(2009)
Hsieh, C-Y
;
Chen, J-S
;
Tsou, W-A
;
Yeh, Y-T
;
Wen, K-A
To enable medical implants such as artificial retina, smart stent microsensors and other implantable wireless sensors, we developed a biocompatible and flexible RE CMOS technology based on a 0.18 mu m CMOS process on 8-inch SOT (silicon on insulator) wafers. The silicon substrate for MOS transistors is 1 mu m thick and sandwiched between two parylene layers. Since the potential implantable microsystems are intended to operate under external mechanical stresses, the effects of bending stresses (between -100 MPa to 100 MPa) on the flexible electronic devices are characterized. The piezo-coefficients for the flexible MOS transistors are extracted from measured I-V characteristics. While carrier mobility is linearly related to the stresses in both longitudinal and transverse directions, the threshold voltage is relatively insensitive to stresses. The experiment results can be used for pre-compensations in circuits design based on this technology.
A flexible mixed-signal/RF CMOS technology for implantable electronics applications
(2010-04-01)
Hsieh, C. Y.
;
Chen, C. S.
;
Tsou, W. A.
;
Yeh, Y. T.
;
Wen, K. A.
A novel post-CMOS fabrication process has been developed to transform a 0.18 mu m 1P6M mixed-signal/RF CMOS (complementary metal oxide semiconductor)-integrated circuit chips fabricated on an 8 inch SOI (silicon-on-insulator) wafer into flexible devices sandwiched between biocompatible material (10 mu m parylene-C on both sides in this case) and enables future implementation of implantable and fully integrated electronic devices. The functionality of the flexible integrated circuits is demonstrated by a low phase noise RF CMOS VCO (voltage-controlled oscillator) circuit in a ring oscillator configuration that operates at a few hundred MHz to GHz. We report here the associated post-processing technology to make these flexible IC chips and the characterization of both MOS transistors and the demonstration circuit on the flexible IC chip under bending stresses.
A flexible mixed-signal/RF CMOS technology for implantable electronics applications
(2010-04-01)
Hsieh, C. Y.
;
Chen, C. S.
;
Tsou, W. A.
;
Yeh, Y. T.
;
Wen, K. A.
A novel post-CMOS fabrication process has been developed to transform a 0.18 mu m 1P6M mixed-signal/RF CMOS (complementary metal oxide semiconductor)-integrated circuit chips fabricated on an 8 inch SOI (silicon-on-insulator) wafer into flexible devices sandwiched between biocompatible material (10 mu m parylene-C on both sides in this case) and enables future implementation of implantable and fully integrated electronic devices. The functionality of the flexible integrated circuits is demonstrated by a low phase noise RF CMOS VCO (voltage-controlled oscillator) circuit in a ring oscillator configuration that operates at a few hundred MHz to GHz. We report here the associated post-processing technology to make these flexible IC chips and the characterization of both MOS transistors and the demonstration circuit on the flexible IC chip under bending stresses.