Browsing by Author "Fang, Hsin-Kai"
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Item type:Item, Laser Lift-Off Mechanisms of GaN Epi-Layer Grown on Pattern Sapphire Substrate(2015-01-01) ;Chang, Tai-Min ;Fang, Hsin-Kai ;Liao, Cheng ;Hsu, Wen-YangWu, YewChung SermonWafer bonding and laser lift-off (LLO) processes were employed to fabricate pattern sapphire thin-GaN light-emitting diodes LEDs (PT-LED). During the LLO process, the required laser energy for PT-LED was much higher than that for flat thin-GaN LED (FT-LED). The yield rate of PT-LED was low, and the leakage current was high. In this study, the laser lift-off mechanisms of PT-LEDs were investigated. (C) The Author(s) 2014. Published by ECS. All rights reserved.