Browsing by Author "Fang, JY"

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Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structures
(2000)
Lin, CF
;
Shu, CK
;
Lee, WH
;
Wen, TC
;
Chu, CF
The growth method and material properties of InGaN/GaN multiple quantum well (MQW) structures were studied in this experiment. The InGaN/GaN-MQW structure were deposited above the 2 mum-thick high quality GaN layers (with background carrier concentration was about 3.2 x 10(16) cm(-3)) on Al2O3 substrates. The interrupt growth time was 10 sec between GaN barrier layer and InGaN well growth at 690 degreesC. The stronger intensity and sharper photoluminescence (PL) spectra was observed from the interrupt growth MQW structures. The mean deviation of the PL peak position was lower than 1% by using the interrupt growth MQW structures at difference growth temperature. The PL spectra was become broaden and weaker by reducing the interrupt time during InGaN/GaN growth. The thickness of one pair InGaN/GaN was also identified by DCX-ray measurement and the growth rate InGaN layer was also calculated in this experiment.
Double-corrugated C-shaped aperture for near-field recording
(2006-02-01)
Chen, YC
;
Fang, JY
;
Tien, CH
;
Shieh, HPD
;
光電工程學系
We applied surface corrugations surrounding the C-aperture on both incident and exit interfaces of the metal film, which can generate surface plasmon (SP) waves coupling to the propagation mode and function as a focusing grating, respectively. Compared with a 60 nm square aperture, the double-corrugated C-aperture can enhance power throughput by five orders of magnitude and reduce spot area by 30%.
Effect of surface passivation removal on planarization efficiency in Cu abrasive-free polishing
(2006)
Fang, JY
;
Tsai, MS
;
Dai, BT
;
Wu, YS
;
Feng, MS
Selective removal of surface passivation on protruded Cu film is a critical factor of Cu planarization. For a stress-free Cu abrasive-free polishing (Cu AFP) process, due to the lack of mechanical abrasion by abrasives, a polishing pad is used instead of abrasives to remove surface passivation during Cu planarization. Thus, the planarization efficiency in Cu AFP relates to the efficiency of surface passivation removed by a pad. Comparing Cu oxides with a non-native Cu-BTA (Cu-Benzotriazole) monolayer used as surface passivation, this study found that an oxide-free Cu surface should be required in Cu AFP. When Cu oxides function as surface passivation in Cu AFP, they are removed with greater difficulty by a pad resulting in low planarization efficiency. Contrary to Cu oxides, high planarization efficiency can be obtained with non-native Cu-BTA as surface passivation in Cu AFP. (c) 2005 The Electrochemical Society.
High-transmission hybrid-effect-assisted nanoaperture
(2006-03-01)
Chen, YC
;
Fang, JY
;
Tien, CH
;
Shieh, HPD
;
光電工程學系
We present a C-aperture encircled by a groove that makes possible the hybrid effect of coupling surface plasmen resonance to propagating waves. Compared to a single C aperture, the groove-encircled aperture can increase transmission by a factor of 2.45 in the near field and by a factor of 1.88 in the far field, showing good agreement with our theoretical calculation. (c) 2006 Optical Society of America.
Orbital susceptibilities of PbSe quantum dots
(2006-02-14)
Jian, WB
;
Lu, WG
;
Fang, JY
;
Chiang, SJ
;
Lan, MD
Different sizes of three-dimensional PbSe quantum dots have been synthesized for the study of orbital magnetic susceptibilities. Two types of orbital susceptibilities have been found, including the Curie susceptibility and finite-size corrections to the Landau susceptibility. The Curie term of a quantum dot manifests itself in the temperature dependence of magnetic susceptibility at low temperatures, while the field dependence of differential susceptibility at high temperatures shows finite-size corrections to the Landau susceptibility. Both of the two kinds of orbital susceptibility, estimated per quantum dot, show linear dependence on the size. (c) 2006 American Institute of Physics.
Pattern effect optimized with non-native surface passivation in copper abrasive-free polishing
(2005)
Fang, JY
;
Tsai, MS
;
Dai, BT
;
Wu, YS
;
Feng, MS
Pattern effects, resulting from different metal removal rates on various feature designs in copper chemical mechanical polishing (Cu CMP), can be reduced in an abrasive-free slurry formulated with HNO3 and benzotriazole (BTA). In the slurry, non-native Cu-BTA adlayer is formed instead of native metal oxide as surface passivation layer on a Cu surface, and it benefits nonlinear Cu removal rate as function of down force. Moreover, by controlling the down force, the Cu removal rate can be independent of down force resulting in the reduction of pattern effect. (C) 2005 The Electrochemical Society.
Roles of copper mechanical characteristics in electropolishing
(2004-01-01)
Chang, SC
;
Shieh, JM
;
Fang, JY
;
Wang, YL
;
Dai, BT
We investigated the effect of film stress; hardness, and grain size of copper films on copper electropolishing, which was considered as a next-generation technique in copper multilevel interconnects. The copper electropolishing rate was found to increase with an increase in the tensile stress of copper films. It was suggested that the tensile stress weakened metallic bonds between copper atoms and assisted the copper electropolishing rate, whereas the hardness and grain size of polished copper films did not relate directly to the copper electropolishing rate due to a negligible etching effect and no mechanical stress applied during copper electropolishing in a concentrated phosphoric acid electrolyte. (C) 2004 American Vacuum Society.
Study on pressure-independent Cu removal in Cu abrasive-free polishing
(2006)
Fang, JY
;
Huang, PW
;
Tsai, MS
;
Dai, BT
;
Wu, YS
Pattern effect, a critical issue in metal planarization, results from different pattern designs bringing a variation of effective local pressure. In order to optimize the pattern effect in Cu planarization, Cu removal should be pressure independent. Recently, it was found that Cu abrasive-free polishing (AFP) technology could benefit pressure-independent Cu removal for Cu planarization by controlling the down force. In this study, by using 5-methyl-1H-benzotriazole as a corrosion inhibitor, pressure-independent Cu removal with AFP slurries can be achieved below a 3 psi down force. Thus, the pattern effect in Cu planarization can be optimized with AFP slurries by low down force. (c) 2005 The Electrochemical Society. [DOI: 10.1149/1.2137469] All rights reserved.