Browsing by Author "Fang, Jiye"

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Dielectrophoretic placement of quasi-zero-, one-, and two-dimensional nanomaterials into nanogap for electrical characterizations
(2012-08-01)
Lin, Yen-Fu
;
Chiu, Shao-Chien
;
Wang, Sheng-Tsung
;
Fu, Sheng-Kai
;
Chen, Chien-Hsiang
DEP is one of promising techniques for positioning nanomaterials into the desirable location for nanoelectronic applications. In contrast, the lithography technique is commonly used to make ultra-thin conducting wires and narrow gaps but, due to the limit of patterning resolution, it is not feasible to make electrical contacts on ultra-small nanomaterials for a bottom-up device fabrication. Thus, integrating the lithography and dielectrophoresis, a real bottom-up fabrication can be achieved. In this work, the device with the nanogap in between two nanofinger-electrodes is made using electron-beam lithography from top down and the ultra-small nanomaterials, such as colloidal PbSe quantum dots, polyaniline nanofibers, and reduced-graphene-oxide flakes, are placed in the nanogap by DEP from bottom up. The threshold electric field for the DEP placement of PbSe nanocrystals was roughly estimated to be about 8.3 x 104 V/cm under our experimental configuration. After the DEP process, several procedures for reducing contact resistances are attempted and measurements of intrinsic electron transport in versatile nanomaterials are performed. It is experimentally confirmed that electron transport in both PbSe nanocrystal arrays and polyaniline nanofibers agrees well with Prof. Ping Sheng's model of granular metallic conduction. In addition, electron transport in reduced-graphene-oxide flakes follows Mott's 2D variable-range-hopping model. This study illustrates an integration of the electron-beam lithography and the DEP techniques for a precise manipulation of nanomaterials into electronic circuits for characterization of intrinsic properties.
"Dielectrophoretic placement of quasi-zero-, one-, and two-dimensional nanomaterials into nanogap for electrical characterizations"
(2012-08-01)
Lin, Yen-Fu
;
Chiu, Shao-Chien
;
Wang, Sheng-Tsung
;
Fu, Sheng-Kai
;
Chen, Chien-Hsiang
"DEP is one of promising techniques for positioning nanomaterials into the desirable location for nanoelectronic applications. In contrast, the lithography technique is commonly used to make ultra-thin conducting wires and narrow gaps but, due to the limit of patterning resolution, it is not feasible to make electrical contacts on ultra-small nanomaterials for a bottom-up device fabrication. Thus, integrating the lithography and dielectrophoresis, a real bottom-up fabrication can be achieved. In this work, the device with the nanogap in between two nanofinger-electrodes is made using electron-beam lithography from top down and the ultra-small nanomaterials, such as colloidal PbSe quantum dots, polyaniline nanofibers, and reduced-graphene-oxide flakes, are placed in the nanogap by DEP from bottom up. The threshold electric field for the DEP placement of PbSe nanocrystals was roughly estimated to be about 8.3 x 104 V/cm under our experimental configuration. After the DEP process, several procedures for reducing contact resistances are attempted and measurements of intrinsic electron transport in versatile nanomaterials are performed. It is experimentally confirmed that electron transport in both PbSe nanocrystal arrays and polyaniline nanofibers agrees well with Prof. Ping Sheng's model of granular metallic conduction. In addition, electron transport in reduced-graphene-oxide flakes follows Mott's 2D variable-range-hopping model. This study illustrates an integration of the electron-beam lithography and the DEP techniques for a precise manipulation of nanomaterials into electronic circuits for characterization of intrinsic properties."
Effects of cross-sectional area on the tunneling-junction array in octahedral PbSe colloidal-nanocrystal solids
(2013)
Chiu, Shao-Chien
;
Jhang, Jia-Sin
;
Chen, Jenn-Fang
;
Fang, Jiye
;
Jian, Wen-Bin
Octahedral PbSe colloidal nanocrystals (NCs) are used to assemble a solid. Because of the special feature of the apexes of the octahedrons, the cross-sectional area of the inter-dot tunneling junctions is much smaller than that formed between spherical NCs. The inter-dot separation between NCs is easily adjusted by mild thermal treatment. Like a spherical NC-solid, the resistance of the octahedral NC-solid is exponentially dependent on the inter-dot separation. On the contrary, due to the difference in the cross-sectional area between the NCs, electron transport in the octahedral NC-solid does not follow the same model used for the explanation of electron transport in a spherical NC-solid. Through analyses of current-voltage and resistance-temperature behaviors, we have confirmed that the model of fluctuation-induced tunneling conduction fits very well with all of the data and explains the variation in the electrical properties of octahedral PbSe colloidal NC-solids after thermal annealing.
Electron transport in high-resistance semiconductor nanowires through two-probe measurements
(2010)
Lin, Yen-Fu
;
Chen, Tzu-Han
;
Chang, Chia-Hung
;
Chang, Yu-Wei
;
Chiu, Yi-Cheng
Since the successful fabrication of semiconductor nanowires, various techniques have been developed to contact these nanowires and to probe their intrinsic electrical properties. Although many novel quasi one-dimensional materials such as Pb(1-x)Mn(x)Se nanoarrays were recently produced, their intrinsic electron transport properties have not been extensively studied so far. In this work, we demonstrate that an ordinary source-drain configuration of field-effect transistors or the two-probe measurement can be applied to the exploration of the intrinsic properties of nanowires. This two-probe measurement approach also works on highly resistive nanowires without an Ohmic contact issue. By using this method, electron transport behavior, resistivity, and carrier concentrations of ZnO, InP, GaP, and Pb(1-x)Mn(x)Se semiconductor nanowires have been investigated. Due to the tiny cross-section and few conducting channels, a nanomaterial usually reveals an ultra high resistance. This technique demonstrates a two-probe characterization of nanostructures, paving the simplest way toward electrical characterizations of all high-resistance nanomaterials such as deoxyribonucleic acid (DNA), molecules and organics.
Facet-controlled facilitation of PbS nanoarchitectures by understanding nanocrystal growth
(2015-01-01)
Loc, Welley Siu
;
Quan, Zewei
;
Lin, Cuikun
;
Pan, Jinfong
;
Wang, Yuxuan
Nanostructured lead sulphide is a significant component in a number of energy-related sustainable applications such as photovoltaic cells and thermoelectric components. In many micro-packaging processes, dimensionality-controlled nano-architectures as building blocks with unique properties are required. This study investigates different facet-merging growth behaviors through a wet-chemical synthetic strategy to produce high-quality controlled nanostructures of lead sulphide in various dimensionalities. It was found that 1D nanowires or 2D nanosheets can be obtained by the merging of reactive {111}- or {110}-facets, respectively, while promoting {100} facets in the early stages after nucleation leads to the growth of 0D nanocubes. The influence of temperature, capping ligands and co-solvent in facilitating the crystal facet growth of each intermediate seed is also demonstrated. The novelty of this work is characterized by the delicate manipulation of various PbS nanoarchitectures based on the comprehension of the facet-merging evolution. The synthesis of facet-controlled PbS nanostructures could provide novel building blocks with desired properties for use in many applications.
Interplay of Spinodal and Diffusion-Limited Aggregation in Formation of Nanocrystal Assembled 2D Islands
(2010-10-21)
Ou, Yi-Ching
;
Zhuravelv, Konstantin S.
;
Fang, Jiye
;
Jian, Wen-Bin
;
電子物理學系
Although self-organization of semiconductor nanocrystals (or quantum dots) into 3D superlattices and exploration of their collective optical, magnetic, and transport properties have been (demonstrated. little is known about the underlying physics of self-assembly, growth mechanisms, and interdot-coupling-induced collective properties. Here we report a facile way of preparing nanocrystal-assembled 2D islands by dropcasting nanocrystal suspension on a hot substrate. Growth mechanisms such as scaling function, spinodal decomposition phase separation, and diffusion-limited aggregation are investigated based on the observation of quasi-monolayer coverage. After a curve fitting to several theoretical growth models, the pair bond (interaction) energy, critical nucleus size, and the phase of growth patterns were determined. Moreover, by heating the substrate and controlling the concentration of nanocrystal suspension, the spinodal decomposition and diffusion-limited aggregation can be tuned to modulate growth patterns of 2D nanocrystal islands. The interplay of these two mechanisms results in a variation or wavelength in spinodal growth patterns and of fractal pattern dimensions. By using this experimental approach. various sizes and shapes of nanocrystal-assembled 2D islands can be deposited on a flat surface of either graphite or gold.
Nanocontact disorder in InP nanowire devices for the enhancement of visible light and oxygen gas sensitivities
(2017-01-01)
Lin, Yen-Fu
;
Chang, Chia-Hung
;
Hung, Tsu-Chang
;
Liu, Zhaoping
;
Fang, Jiye
InP nanowires, synthesized through a self-seeded growth approach, are used in the fabrication of field-effect transistors which consist of source, drain, and back-gate electrodes. The weak gating voltage dependence implies low carrier concentrations whereas its behavior reveals native n-type doping in InP nanowires. These InP nanowire devices exhibit a vast variation of room-temperature resistance that raises a question about contact resistance. For devices of low room-temperature resistance, electron transport in InP nanowires is investigated using temperature dependent resistance in the temperature range between 80 and 300 K, and it can be analyzed using the model of thermal activation. For other devices of high room-temperature resistance, we take into account nanocontact resistance. Models of both Schottky contact and Mott's variable range hopping (VRH) are considered. The two resistances are connected in parallel to give total contact resistance of InP nanowire devices. After fitting experimental data by the proposed model, we estimate effective Schottky barriers and disorder contributions to nanocontact resistance. The effective Schottky barrier, and the nanocontact Schottky and Mott's VRH resistances are plotted as a function of the device room-temperature resistance which indicates the scale of disorder. Using room-temperature resistance of InP nanowire devices, the devices are classified into nanowire-or contact-dominated devices. The two different class of devices are used to check their photo-and gas-sensitivities. The contact-dominated InP nanowire devices show low dark current and low photocurrent as usual, but these contact-dominated devices give high ratio of photo-to dark-current. That result reveals a high photo-sensitivity for those devices of high nanocontact resistance. On the other hand, for gas sensing experiments, the contact-dominated devices show as well a high ratio of resistance under O-2 to that under N-2 gas exposure. (C) 2017 The Authors. Published by Elsevier B.V.
Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities
(2015-08-11)
Lin, Yen-Fu
;
Chang, Chia-Hung
;
Hung, Tsu-Chang
;
Jian, Wen-Bin
;
Tsukagoshi, Kazuhito
To fabricate reliable nanoelectronics, whether by top-down or bottom-up processes, it is necessary to study the electrical properties of nanocontacts. The effect of nanocontact disorder on device properties has been discussed but not quantitatively studied. Here, by carefully analyzing the temperature dependence of device electrical characteristics and by inspecting them with a microscope, we investigated the Schottky contact and Mott's variable-range-hopping resistances connected in parallel in the nanocontact. To interpret these parallel resistances, we proposed a model of Ti/TiOx in the interface between the metal electrodes and nanowires. The hopping resistance as well as the nanocontact disorder dominated the total device resistance for high-resistance devices, especially at low temperatures. Furthermore, we introduced nanocontact disorder to modulate the light and gas responsivities of the device; unexpectedly, it multiplied the sensitivities compared with the intrinsic sensitivity of the nanowires. Our results improve the collective understanding of electrical contacts to low-dimensional semiconductor devices and will aid performance optimization in future nanoelectronics.
Nanocrystal shape and nanojunction effects on electron transport in nanocrystal-assembled bulks
(2013)
Chiu, Shao-Chien
;
Jhang, Jia-Sin
;
Lin, Yen-Fu
;
Hsu, Shih-Ying
;
Fang, Jiye
Bulk nanostructured materials are made from the assembly of octahedral PbSe nanocrystals. After thermal annealing, the artificial bulk demonstrates a large difference in behavior depending on the temperature, and a large variation of room-temperature resistivity of up to seven orders of magnitude. This variation originates from the high-indexed sharp edges of the octahedral nanocrystals. As the nanocrystals are arranged in the edge-to-edge configuration, which was observed in scanning electron microscopy images, the inter-nanocrystal capacitance is small due to the small parallel area between the nanocrystals. The small capacitance results in a high thermal fluctuation voltage and drives electron transport. The temperature-dependent resistivity and the electric field-dependent current are highly in agreement with the model of fluctuation-induced tunneling conduction. Thermal annealing reduces the inter-nanocrystal separation distance, creating a large variation in the electrical properties. Specifically, octahedral-shaped PbSe nanocrystals are employed in tailoring the electron transport in bulk nanostructured materials.
Probing Capacitive Coupling and Collective Transport in PbSe Quantum-Dot Arrays Using Scanning Tunneling Spectroscopy
(2009-05-07)
Ou, Yi-Ching
;
Wu, Jiun-Ji
;
Fang, Jiye
;
Jian, Wen-Bin
;
電子物理學系
Semiconductor quantum dots with diameters of several to tens of nanometers have been largely synthesized through colloidal techniques for nanoscience exploration of quantum confinement, Coulomb staircase, and artificial-atom states in individual quantum dots and self-assembling growth behavior. Although charge transport of three-dimensional quantum dot arrays has been attempted for study on the micron scale, the electrical properties of a nanoscale array, self-assembled from a single quantum dot through a bottom-up procedure, have not been explored yet. We control growth parameters to self-assemble different sizes of PbSe quantum-dot arrays on flat gold surface for scanning tunneling spectroscopy measurements. The current-voltage curves of the arrays are analyzed using a double-barrier tunnel junction model to acquire the shunt capacitance between the array and the gold substrate. The increment of this capacitance is small as the particle number increases extremely from 1 to 40. Thus the array cannot be taken as a simple semiconductor island. We apply collective transport theory to exploration of electron tunneling and capacitive coupling between PbSe quantum dots in the array.
Soluble InP and GaP Nanowires: Self-Seeded, Solution-Liquid-Solid Synthesis and Electrical Properties
(2009)
Liu, Zhoping
;
Sun, Kai
;
Jian, Wen-Bin
;
Xu, Dan
;
Lin, Yen-Fu
We demonstrate a facile method for self-seeded, solution-liquid-solid growth of soluble InP and GaP nanowires at it temperature of approximate to 300 degrees C. Both types of nanowires are single crystals with very small diameters. The synthesized InP nanowires are almost defect-free, whereas the GaP nanowires have some microtwins. The effect of reaction temperatures and input ligand/III/V (III and V indicate elements of Group 13 and 15 respectively) ratios oil wire formation is discussed, and two competitive chemical pathways involved in the nanowire formation are proposed. In addition, electrical properties of these III-V nanowires, generated from the solution-based approach, were investigated for the first time. The current-voltage (I-V) and room temperature resistance investigations indicate that both InP and GaP nanowires possess very low native point defects for carrier concentrations and they could be potentially promising building blocks in optoelectronic applications.