Browsing by Author "Fang, Yue-Wen"

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A Metal-Insulator Transition of the Buried MnO2 Monolayer in Complex Oxide Heterostructure
(2016-11-02)
Liu, Heng-Jui
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Lin, Jheng-Cyuan
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Fang, Yue-Wen
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Wang, Jing-Ching
;
Huang, Bo-Chao
A novel artificially created MnO2 monolayer system is demonstrated in atomically controlled epitaxial perovskite heterostructures. With careful design of different electrostatic boundary conditions, a magnetic transition as well as a metal-insulator transition of the MnO2 monolayer is unveiled, providing a fundamental understanding of dimensionality-confined strongly correlated electron systems and a direction to design new electronic devices.
Giant Photoresponse in Quantized SrRuO3 Monolayer at Oxide Interfaces
(2018-03-01)
Liu, Heng-Jui
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Wang, Jing-Ching
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Cho, Deok-Yong
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Ho, Kang-Ting
;
Lin, Jheng-Cyuan
The photoelectric effect in semiconductors is the main mechanism for most modern optoelectronic devices, in which the adequate bandgap plays the key role for acquiring high photoresponse. Among numerous material categories applied in this field, the complex oxides exhibit great possibilities because they present a wide distribution of band gaps for absorbing light with any wavelength. Their physical properties and lattice structures are always strongly coupled and sensitive to light illumination. Moreover, the confinement of dimensionality of the complex oxides in the heterostructures can provide more diversities in designing and modulating the band structures. On the basis of this perspective, we have chosen itinerary ferromagnetic SrRuO3 as the model material, and fabricated it in one-unit-cell thickness in order to open a small band gap for effective utilization of visible light. By inserting this SrRuO3 monolayer at the interface of the well-developed two-dimensional electron gas system (LaAlO3/SrTiO3), the resistance of the monolayer can be further revealed. In addition, a giant enhancement (>300%) of photoresponse under illumination of visible light with power density of 500 mW/cm(2) is also observed. Such can be ascribed to the further modulation of band structure of the SrRuO3 monolayer under the illumination, confirmed by cross-section scanning tunneling microscopy (XSTM). Therefore, this study demonstrates a simple route to design and explore the potential low dimensional oxide materials for future optoelectronic devices.
The preparation, and structural and multiferroic properties of B-site ordered double-perovskite Bi2FeMnO6
(2017-06-14)
Sun, Lin
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Fang, Yue-Wen
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He, Jun
;
Zhang, Yuanyuan
;
Qi, Ruijuan
We report the structural, magnetic, and ferroelectric properties of double-perovskite Bi2FeMnO6 in which Fe3+ and Mn3+ cations are present with alternative ordering along the [111] direction. High-flux synchrotron X-ray diffraction and high resolution transmission electron microscopy show that the pseudo-cubic lattice of Bi2FeMnO6 consists of alternatively corner-shared octahedra of FeO6 and MnO6. In the highly ordered Bi2FeMnO6 thin films, the unusual spin-glassy magnetic state is observed below 18 K by a superconducting quantum interference device, and this is ascribed to the magnetic frustration at the [111] Fe3+ and Mn3+ planes as indicated by X-ray magnetic circular dichroism measurements. Combining with the orbital model analysis based on Goodenough-Kanamori-Anderson rules, first-principles calculations and Monte Carlo simulations suggest that magnetic frustration is dominated by the long-range second nearest neighboring antiferromagnetic interactions of Fe3+-Fe3+ and Mn3+-Mn3+ and leads to the surprisingly weak magnetism. On the other hand, robust room-temperature ferroelectricity in Bi2FeMnO6 films is confirmed by piezoelectric force microscopy through electrically switching the polarization state and the ferroelectric retention.