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Browsing by Author "Fatah, Faiz"

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    Bias-Dependent Radio Frequency Performance for 40nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600GHz
    (2012-11-01)
    Fatah, Faiz
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    Kuo, Chien-I
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    Hsu, Heng-Tung
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    Chiang, Che-Yang
    ;
    Hsu, Ching-Yi
    In this paper, we present the fabrication and characterization of 40 nm InAs-channel high-electron-mobility-transistor (HEMT) devices. Both DC and RF measurements were performed under various bias conditions. We have also extracted bias-dependent intrinsic device parameters to determine the optimum conditions of operation. It is concluded that a high current-gain cutoff frequency (f(T)) of 615 GHz can be achieved when the device is biased near the occurrence of impact ionization. (C) 2012 The Japan Society of Applied Physics