Browsing by Author "Feng, LW"

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Improvement of reliability for polycrystalline thin-film transistors using self-aligned fluorinated silica glass spacers
(2005)
Tu, CH
;
Chang, TC
;
Liu, PT
;
Zan, HW
;
Tai, YH
Polycrystalline silicon thin-film transistors (poly-Si TFTs) with self-aligned fluorine-doped SiO2 (FSG) spacer were investigated in this study. The presence of FSG spacers can effectively reduce the lateral electrical field near the drain side of a poly-Si TFT device, and strongly passivate Si dangling bonds at the grain boundaries. The significant enhancement in electrical performance suppresses serious kink effect and improves electrical reliability of poly-Si TFTs effectively. In addition, the proposed poly-TFT structure is uncomplicated and compatible with existing TFT manufacturing processes. (c) 2005 The Electrochemical Society.