Browsing by Author "Feng, Milton"

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Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate
(2006-01-01)
Liao, Yu-Sheng
;
Lin, Gong-Ru
;
Kuo, Hao-Chung
;
Feng, Milton
;
光電工程學系
A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes, with the partially p-doped photoabsorption layer, grown on GaAs substrate by using a linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 mu m are 13 pA, 0.6 A/W, 3.4.10(-15) W/Hz(1/2), and 8 GHz, respectively, at 1550 nm. Under the illumination of 1.2-ps pulse-train, the measured impulse response is 41 ps and the frequency bandwidth is up to 8 GHz with heterodyne beating measurement. The low cost InGaAs photodiode with high current bandwidth product (350 mA center dot GHz, at 10 GHz) and bandwidth-efficient product (4.8 GHz center dot A/W) have been achieved.
Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate - art. no. 61190L
(2006)
Liao, Yu-Sheng
;
Lin, Gong-Ru
;
Kuo, Hao-Chung
;
Feng, Milton
;
光電工程學系
A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes, with the partially p-doped photoabsorption layer, grown on GaAs substrate by using a linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 mu m are 13 pA, 0.6 A/W, 3.4.10(-15) W/Hz(1/2), and 8 GHz, respectively, at 1550 nm. Under the illumination of 1.2-ps pulse-train, the measured impulse response is 41 ps and the frequency bandwidth is up to 8 GHz with heterodyne beating measurement. The low cost InGaAs photodiode with high current bandwidth product (350 mA center dot GHz, at 10 GHz) and bandwidth-efficient product (4.8 GHz center dot A/W) have been achieved.
VCSEL with bi-layer oxidized aperture enables 140-Gbit/s OFDM Transmission over 100-m-long OM5 MMF
(2019-01-01)
Wu, Wei-Li
;
Huang, Cheng-Yi
;
Wang, Huai-Yung
;
Lin, Yu-Hong
;
Wu, Cheng-Han
A few-mode 850-nm VCSEL chip directly modulated by 16-QAM OFDM data at 140 Gbit/s is demonstrated to enable error-free transmission over 100-m-long OM5 MMF with 3.1-dB power penalty compared to the back-to-back case.