Browsing by Author "Feng, SJ"

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The impact of STI induced reliabilities for scaled p-MOSFET in an advanced multiple oxide CMOS technology
(2004)
Chung, SS
;
Yeh, CH
;
Feng, SJ
;
Lai, CS
;
Yang, JJ
In this paper, we present new results on the width dependent hot-carrier (HC) reliabilities for shallow-trench-isolated (STI) pMOSFETs in a multiple oxide CMOS technology. For the first time, different phenomena in pMOSFET for a multiple oxide process have been observed. Extensive studies have been made for ALD grown and plasma treated oxide pMOSFETs. Experimental data shows that the drain current degradation is enhanced for a reducing gate width. For thick oxide, the I-D degradation is due to the channel length shortening, and electron trap is dominant for the device degradation. While for thin gate oxide, the I-D degradation is due to width narrowing, and hole trap is dominant, in which both electron and hole trap induced V-T shifts are significant. The degradation in thick-oxide pMOSFETs causes an increase of off-state leakage Current and an increase of DeltaV(T) in thin-oxide with reduced width.