Browsing by Author "Fu, Chang-Tsung"

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3 similar to 11-GHz CMOS UWB LNA using dual feedback for broadband matching
(2006)
Fu, Chang-Tsung
;
Kuo, Chien-Nan
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A 1.5V, 3 similar to 11GHz CMOS UWB LNA using dual feedback loops is reported. Using shunt capacitive feedback and series transformer feedback the broadband matching condition is achieved with high flat gain. Fabricated in 0.18um CMOS process, the measurement result demonstrates power gain of 11dB and maximum NF less than 5.6 dB throughout the frequency range from 3.1 to 10.6 GHz with power consumption of 10.6 mW.
3 similar to 11-GHz CMOS UWB LNA using dual feedback for broadband matching
(2006-01-01)
Fu, Chang-Tsung
;
Kuo, Chien-Nan
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A 1.5V, 3 similar to 11GRz CMOS UWB LNA using dual feedback loops is reported. Using shunt capacitive feedback and series transformer feedback the broadband matching condition is achieved with high flat gain. Fabricated in 0.18um CMOS process, the measurement result demonstrates power gain of 11dB and maximum NF less than 5.6dB throughout the frequency range from 3.1 to 10.6 GHz with power consumption of 10.6mW.
A 2.4 to 5.4 GHz low power CMOS reconfigurable LNA for multistandard wireless receiver
(2007)
Fu, Chang-Tsung
;
Ko, Chun-Lin
;
Kuo, Chien-Nan
;
交大名義發表
;
National Chiao Tung University
A CMOS reconfigurable LNA is reported. By combination of switched inductors and varactors it performs continuous frequency tuning from 2.4 to 5.4 GHz with 500MHz 3dB-bandwidth. Switching transistor is used to provide variable gain control over a 12dB-range. The LNA supports standards including Bluetooth, WiMAX, UWB mode-1, 802.11b/g and part of 802.11a. Fabricated in 0.13um CMOS process the LNA achieves up to 25dB power gain, 2.2dB noise figure, -1dBm IIP3 while consuming less than 5mV from 1-V power supply.
A 2.4-5.4-GHz Wide Tuning-Range CMOS Reconfigurable Low-Noise Amplifier
(2008-12-01)
Fu, Chang-Tsung
;
Ko, Chun-Lin
;
Kuo, Chien-Nan
;
Juang, Ying-Zong
;
電子工程學系及電子研究所
A 2.4-5.4-GHz CMOS reconfigurable low-noise amplifier (LNA) is designed. It consists of two stages: a broadband input stage for a steady input matching and noise performance, and a reconfigurable band-selective stage which provides a wide-range frequency tuning from 2.4 to 5.4 GHz and a 12-dB stepped gain with linearity adjustment. The frequency tuning is conducted by a multitapped switching inductor and varactors. Careful design of the switching inductor achieves consistent performance among frequency configurations. The stepped gain and linearity adjustment are provided by a size-switchable transistor with a variable biasing. Fabricated in 0.13 mu m CMOS technology this LNA exhibits performance including up to 25 dB power gain, 2.2-3.1 dB noise figure and less than 5 mW power consumption under 1 V power supply.
A 5-GHz, 30-dBm, 0.9-dB insertion loss single-pole double-throw T/R switch in 90nm CMOS
(2008)
Fu, Chang-Tsung
;
Taylor, Stewart S.
;
Ku, Chien-Nan
;
交大名義發表
;
National Chiao Tung University
A 5GHz, 30-dBm CMOS T/R switch implemented in 90nm CMOS is reported. A body isolation technique is employed and optimized for power handling capability. Inductors are employed with the transistor switches for parallel resonance to improve isolation. Thick oxide NMOS transistors are used for the switching transistors and placed inside the inductors to reduce the active chip area to approximately 0.2mm(2). 0.9-dB insertion loss for both TX and RX modes is achieved with a 5-V control voltage.
A Fully Integrated Ultra-Low Insertion Loss T/R Switch for 802.11b/g/n Application in 90 nm CMOS Process
(2009-05-01)
Kidwai, Adil A.
;
Fu, Chang-Tsung
;
Jensen, Jonathan C.
;
Taylor, Stewart S.
;
交大名義發表
A 30 dBm ultra-low insertion loss CMOS transmit-receive switch fully integrated with an 802.11b/g/n transceiver front-end is demonstrated. The switch achieves an insertion loss of 0.4 dB in transmit mode and 0.1 dB in receive mode. The entire receiver chain from antenna to baseband output achieves a measured noise figure of 3.6 dB at 2.4 GHz. The switch has a P(1dB) greater than 30 dBm by employing a substrate isolation technique without using deep n-well technology. The switch employs a 1.2 V supply and occupies 0.02 mm(2) of die area.
Low-Noise Amplifier Design With Dual Reactive Feedback for Broadband Simultaneous Noise and Impedance Matching
(2010-04-01)
Fu, Chang-Tsung
;
Kuo, Chien-Nan
;
Taylor, Stewart S.
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The simultaneous noise and impedance matching (SNIM) condition for a common-source amplifier is analyzed. Transistor noise parameters are derived based on the more complete hybrid-pi model, and the dominant factors jeopardizing SNIM are identified. Strategies for narrowband and broadband SNIM (BSNIM) are derived accordingly. A dual reactive feedback circuit along with an LC-ladder matching network is proposed to achieve the BSNIM. It includes a capacitive and an inductive feedback, where the former utilizes the transistor parasitic gate-to-drain capacitance and the latter is formed by transformer coupling. This circuit topology has been validated in 0.18- and 0.13-mu m CMOS technologies for a 3-11-GHz ultra-wideband (UWB) and a 2.4-5.4-GHz multistandard application, respectively. The 3-11-GHz UWB low-noise amplifier is detailed as a design example.
Ultra broad-band low noise amplifier utilizing dual feedback technique
(2007-08-02)
Fu, Chang-Tsung
;
Kuo, Chien-Nan
This invention relates to a low noise amplifier, used in radio frequency integrated circuit design, especially low noise amplifiers for ultra broad-band wireless communication, comprising at least a transistor of the core circuit of a low noise amplifier structure, a transformer that is implemented on the chip, in order to form a dual feedback amplifier, that is, an amplifier structure comprising an inductive feedback and a capacitive feedback, wherein the capacitive feedback is used for the low and medium frequency range, while the inductive feedback is used for the high frequency range. By assembling an amplifier circuit with these two feedback paths, it is possible to provide a broadband and good impedance matching at the signal input end of the circuit. The low noise amplifier circuit structure of the present invention is able to provide optimal conditions for broadband input impedance matching and broadband noise optimum; besides significantly increasing the gain and gain flatness, there are also huge improvements to the noise performance and the cost-down on fabrication, and the energy consumption can also be maintained at a very low level.