Browsing by Author "Fu, S. F."

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Growth of optical-quality, uniform In-rich InGaN films using two-heater metal-organic chemical vapor deposition
(2013-11-15)
Fu, S. F.
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Chen, C. Y.
;
Li, F. W.
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Hsu, C. H.
;
Chou, W. C.
Good-optical-quality, thick InxGa1-xN films with high In content were grown using a homemade two-heater metal-organic chemical vapor deposition system. By varying the growth temperature, it was Found that the In composition of the InGaN epilayer varied from 18 to 59% as the substrate temperature decreased from 750 to 625 degrees C. Our results show that the optical properties in terms of the emission peak wavelength and linewidth are uniformly distributed throughout the entire 2 in. wafer for the x=0.40 InGaN sample. The resultant mean peak wavelength and FWHM are 808 +/- 6 nm and 229 +/- 18 meV, respectively, at 18 K. In addition, for the InGaN film grown at 625 degrees C, a noticeable decrease in the In composition occurred when the ceiling temperature was >800 degrees C, indicative of the occurrence of parasitic reactions in the gas phase. (C) 2013 Elsevier B.V. All rights reserved.
Incorporation Behaviors of In and Ga in the Two-Heater MOVPE Growth of InGaN Films
(2016)
Fu, S. F.
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Cheng, C. H.
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Lee, F. W.
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Chen, S. Y.
;
Liao, B. W.
Incorporation behaviors of In and Ga of InGaN films grown by the two-heater metal-organic vapor-phase epitaxial horizontal reactor is investigated by varying growth parameters, such as the substrate temperature, ceiling temperature and reactor pressure. Two In loss mechanisms are observed by the analysis of the concentration and temperature profiles in the deposition zone. The gas-phase parasitic-loss mechanism (activation energy similar to 34.2 +/- 0.1 kcal/mol) is significant in the ceiling temperature T-ceil >= 800 degrees C and at substrate temperature (T-sub) of 600 degrees C. The decomposition-loss mechanism, which arises from In desorption on the growing surface, is significant in T-sub > 625 degrees C region. The desorption activation energy obtained is 28.0 +/- 0.1 kcal/mol, which is close to that of InN (25-26 kcal/mol). This suggests the In decomposition-loss mechanism in InGaN growth does not differ substantially from that in binary InN growth. On the other hand, the gas-phase parasitic-loss mechanism of Ga is negligible in the growth condition that we have explored. Exception is found for reactor pressure at T-ceil = 950 degrees C, where both factors advantageous and disadvantageous to Ga incorporation are unambiguously observed. We have proposed explanation for the above observation. (C) The Author(s) 2016. Published by ECS. All rights reserved.
The structural and optical properties of InN nanodots grown with various V/III ratios by metal-organic chemical vapor deposition
(2009-07-22)
Fu, S. F.
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Wang, S. M.
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Lee, L.
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Chen, C. Y.
;
Tsai, W. C.
Self-assembled InN nanodots have been prepared at 650 degrees C with various V/III ratios from 500 to 30 000 by metal-organic chemical vapor deposition (MOCVD). It is found that the dot density and morphological size as well as the optical properties all display drastic changes at V/III = 12000. Generally, denser and smaller InN nanodots with higher emission energy and narrower linewidth were obtained when growth was conducted at V/III ratios slightly lower than 12 000 as compared to those at higher V/III ratios. The physical properties of our MOCVD-grown InN nanodots are sensitive to the surface structure and the morphology is very similar to molecular beam epitaxially grown GaN and InN films, which may be used as a guide to optimize the InN growth.